Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si
文献类型：期刊论文
| 作者 | Dou, YN; He, Y; Huang, CY; Zhou, CL; Ma, XG; Chen, R; Chu, JH |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2012 |
| 卷号 | 109期号:3 |
| 英文摘要 | In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from similar to 0 cm(-2) to -2x10(12) cm(-2) by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO (x) layer. |
| WOS记录号 | WOS:000310316800023 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/6953]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Dou, YN,He, Y,Huang, CY,et al. Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2012,109(3). |
| APA | Dou, YN.,He, Y.,Huang, CY.,Zhou, CL.,Ma, XG.,...&Chu, JH.(2012).Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,109(3). |
| MLA | Dou, YN,et al."Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 109.3(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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