Study of near white light emission for ZnO thin films grown on silicon substrates
文献类型：期刊论文
| 作者 | Lv, JG; Liu, CL; Gong, WB; Zi, ZF; Chen, XM; Chen, XS; Huang, K; He, G; Shi, SW; Song, XP |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2012 |
| 卷号 | 27期号:11 |
| 英文摘要 | ZnO thin films at growth time of 6, 8, 10 and 12 h were prepared by hydrothermal approach. The microstructure, surface morphology and photoluminescence properties were investigated by x-ray diffraction, field-emission scanning electron microscope and fluorescence spectrometer. The results reveal that all the thin films have hexagonal wurzite structure and preferential orientation along the c-axis. The density of nanorods increases first and then decreases with the increase of growth time. The photoluminescence spectra consist of sharp near band-edge, broad visible and near-infrared emissions. The chromaticity coordinates and color rendering indices of ZnO thin film at growth time of 10 h are x = 0.3537, y = 0.3744 and 90, respectively. The mechanisms of the green, yellow, orange-red, red and near-infrared emissions were discussed in detail. |
| WOS记录号 | WOS:000310447200021 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/6959]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Lv, JG,Liu, CL,Gong, WB,et al. Study of near white light emission for ZnO thin films grown on silicon substrates[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(11). |
| APA | Lv, JG.,Liu, CL.,Gong, WB.,Zi, ZF.,Chen, XM.,...&Sun, ZQ.(2012).Study of near white light emission for ZnO thin films grown on silicon substrates.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(11). |
| MLA | Lv, JG,et al."Study of near white light emission for ZnO thin films grown on silicon substrates".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.11(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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