Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe
文献类型：期刊论文
| 作者 | Zha, FX; Li, MS; Shao, J; Wang, QY; Ren, XR; An, K; Zhao, XL; Shen, XC |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:14 |
| 英文摘要 | The vacancy doped p-type narrow band semiconductor of Hg0.73Cd0.27Te was characterized by ultra-high vacuum scanning tunneling microscopy (STM) and spectroscopy. The imaging displays surprisingly different topographies for positive and negative imaging biases, between which the observed surface pits with the negative bias are few tens nanometers shallower than their counterparts with the positive bias. The effect is subjected to two different local tunneling mechanisms which are not solely dictated by surface electronic properties. The observation contrasts with the conventional geometric view of the nanometer-scale corrugation of STM topography. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756938] |
| WOS记录号 | WOS:000309603300032 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/6973]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Zha, FX,Li, MS,Shao, J,et al. Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe[J]. APPLIED PHYSICS LETTERS,2012,101(14). |
| APA | Zha, FX.,Li, MS.,Shao, J.,Wang, QY.,Ren, XR.,...&Shen, XC.(2012).Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe.APPLIED PHYSICS LETTERS,101(14). |
| MLA | Zha, FX,et al."Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe".APPLIED PHYSICS LETTERS 101.14(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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