Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods
文献类型:期刊论文
作者 | Lv, JG; Liu, CL; Gong, WB; Zi, ZF; Chen, XS; Huang, K; Wang, T; He, G; Shi, SW; Song, XP |
刊名 | OPTICAL MATERIALS
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出版日期 | 2012 |
卷号 | 34期号:11 |
英文摘要 | The crystal structure and morphology of ZnO, grown on silicon substrate by two-step method, were measured by X-ray diffraction and field emission scanning electron microscopy. The results reveal that the sample is mainly composed of ZnO nanorods and preferentially oriented in the c-axis direction. The photoluminescence properties of the ZnO nanorods were investigated over the temperatures from 10 K to 297 K. There exist three emission bands in near band-edge, green-yellow-orange-red and near-infrared, respectively. Donor bound exciton ((DX)-X-0) and its phonon replicas emission peaks were observed in low temperature photoluminescence (PL). The (DX)-X-0 and its phonon replicas peak intensity decreased with the increase of temperature and disappeared when the temperature increased up to 87 K. The decay in the (DX)-X-0 and its phonon replicas emission peak intensity stemmed from the thermal dissociation of (DX)-X-0 to free exciton. Temperature-dependent second-order diffraction of the near band-edge emissions were investigated in detail. (C) 2012 Elsevier B.V. All rights reserved. |
WOS记录号 | WOS:000307693700032 |
公开日期 | 2013-03-18 |
源URL | [http://202.127.1.142/handle/181331/6987] ![]() |
专题 | 上海技术物理研究所_上海技物所 |
推荐引用方式 GB/T 7714 | Lv, JG,Liu, CL,Gong, WB,et al. Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods[J]. OPTICAL MATERIALS,2012,34(11). |
APA | Lv, JG.,Liu, CL.,Gong, WB.,Zi, ZF.,Chen, XS.,...&Sun, ZQ.(2012).Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods.OPTICAL MATERIALS,34(11). |
MLA | Lv, JG,et al."Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods".OPTICAL MATERIALS 34.11(2012). |
入库方式: OAI收割
来源:上海技术物理研究所
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