Effect of Molecular Passivation on the Doping of InAs Nanowires
文献类型：期刊论文
| 作者 | Shu, HB; Cao, D; Liang, P; Jin, SZ; Chen, XS; Lu, W |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
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| 出版日期 | 2012 |
| 卷号 | 116期号:33 |
| 英文摘要 | The molecular passivation effect on the doping of InAs nanowires is explored by the first-principles calculation within the density functional theory. We demonstrate. the passivation of two different molecules that is implemented by the adsorption of NH3 and NO2 on the sidewall of InAs nanowire, respectively, but the two molecular passivations indicate different roles in the doping of InAs nano-wires. The NH3 adsorption is a physisorption process which makes InAs nanowire with surface dangling bonds (SDBs) stay at n-type while the adsorption of NO2 molecule is chemisorption that can reactivate the Zn dopant in InAs nanowires and yields a p-type doping characteristic. The difference of molecular passivation effect is attributed to the charge-compensation ability of passivating molecules to the SDBs of nanowires. This mechanism can be applied to explain the experimental observations on the doping of InAs nanowires through the surface passivation. |
| WOS记录号 | WOS:000307748700075 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/6995]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Shu, HB,Cao, D,Liang, P,et al. Effect of Molecular Passivation on the Doping of InAs Nanowires[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2012,116(33). |
| APA | Shu, HB,Cao, D,Liang, P,Jin, SZ,Chen, XS,&Lu, W.(2012).Effect of Molecular Passivation on the Doping of InAs Nanowires.JOURNAL OF PHYSICAL CHEMISTRY C,116(33). |
| MLA | Shu, HB,et al."Effect of Molecular Passivation on the Doping of InAs Nanowires".JOURNAL OF PHYSICAL CHEMISTRY C 116.33(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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