Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors
文献类型：期刊论文
| 作者 | Kang, TT; Ueda, T; Komiyama, S |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2012 |
| 卷号 | 59期号:8 |
| 英文摘要 | For an infrared photon detector, such as charge-sensitive infrared phototransistors (CSIPs), we propose and use a capacitive charging method to study some failure mechanisms that disable the photon response of CSIPs. Two failure mechanisms are highlighted, namely interquantum well (QW) leakage and low tunneling probability for intersubband-transition-excited electrons. A correlation between the Al content in the inter-QW AlGaAs barrier and the failure mechanism type are discussed. On the other hand, the previously unexplained puzzle that the success of photon response is only weakly dependent on the QW electron mobility that is attributed to an imperfect inter-QW barrier. |
| WOS记录号 | WOS:000306920200019 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7003]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Kang, TT,Ueda, T,Komiyama, S. Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2012,59(8). |
| APA | Kang, TT,Ueda, T,&Komiyama, S.(2012).Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors.IEEE TRANSACTIONS ON ELECTRON DEVICES,59(8). |
| MLA | Kang, TT,et al."Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors".IEEE TRANSACTIONS ON ELECTRON DEVICES 59.8(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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