Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
文献类型：期刊论文
| 作者 | Xia, H; Lu, ZY; Li, TX; Parkinson, P; Liao, ZM; Liu, FH; Lu, W; Hu, WD; Chen, PP; Xu, HY |
| 刊名 | ACS NANO
 |
| 出版日期 | 2012 |
| 卷号 | 6期号:7 |
| 英文摘要 | The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by conductive atomic force microscopy. Linear responsivity against the bias voltage is observed for moderate n-doped GaAs wires with a Schottky contact under illumination, while that of the undoped ones exhibits a saturated response. The carrier lifetime of a single nanowire can be obtained by simulating the characteristic photoelectric behavior. Consistent with the photoluminescence results, the significant drop of minority hole lifetime, from several hundred to subpicoseconds induced by n-type doping, leads to the distinct photoconductive features. Moreover, by comparing with the photoelectric behavior of AlGaAs shelled nanowires, the equivalent recombination rate of carriers at the surface is assessed to be > 1 x 10(12) s(-1) for 2 x 10(17) cm(-3) n-doped bare nanowires, nearly 30 times higher than that of the doping-related bulk effects. This work suggests that intentional doping in nanowires could change the charge status of the surface states and impose significant impact on the electrical and photoelectrical performances of semiconductor nanostructures. |
| WOS记录号 | WOS:000306673800029 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7015]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Xia, H,Lu, ZY,Li, TX,et al. Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping[J]. ACS NANO,2012,6(7). |
| APA | Xia, H.,Lu, ZY.,Li, TX.,Parkinson, P.,Liao, ZM.,...&Jagadish, C.(2012).Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping.ACS NANO,6(7). |
| MLA | Xia, H,et al."Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping".ACS NANO 6.7(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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