中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method

文献类型:期刊论文

作者Bu, HJ; Gao, J; Hu, GJ; Dai, N
刊名PHYSICA B-CONDENSED MATTER
出版日期2012
卷号407期号:13
英文摘要Transport properties of La(0.8)Bao(2)MnO(3) thin films deposited by the sol-gel method were investigated. It has been found that resistivity plateaus occurred in the rho-T curves after application of a dc bias current over a critical value. A current of 200 mu A could induce a huge resistance variation similar to 1200% in these La(0.8)Bao(2)MnO(3) films near room temperature, demonstrating a colossal electroresistance effect. Such strange transport behavior suggests the formation of conductive filaments and that the multiphase coexistence is sensitive to external stimuli. This phenomenon may find applications in sensing and logic devices. (C) 2012 Elsevier B.V. All rights reserved.
WOS记录号WOS:000304664500026
公开日期2013-03-18
源URL[http://202.127.1.142/handle/181331/7021]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Bu, HJ,Gao, J,Hu, GJ,et al. Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method[J]. PHYSICA B-CONDENSED MATTER,2012,407(13).
APA Bu, HJ,Gao, J,Hu, GJ,&Dai, N.(2012).Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method.PHYSICA B-CONDENSED MATTER,407(13).
MLA Bu, HJ,et al."Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method".PHYSICA B-CONDENSED MATTER 407.13(2012).

入库方式: OAI收割

来源:上海技术物理研究所

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