Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method
文献类型:期刊论文
作者 | Bu, HJ; Gao, J; Hu, GJ; Dai, N |
刊名 | PHYSICA B-CONDENSED MATTER
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出版日期 | 2012 |
卷号 | 407期号:13 |
英文摘要 | Transport properties of La(0.8)Bao(2)MnO(3) thin films deposited by the sol-gel method were investigated. It has been found that resistivity plateaus occurred in the rho-T curves after application of a dc bias current over a critical value. A current of 200 mu A could induce a huge resistance variation similar to 1200% in these La(0.8)Bao(2)MnO(3) films near room temperature, demonstrating a colossal electroresistance effect. Such strange transport behavior suggests the formation of conductive filaments and that the multiphase coexistence is sensitive to external stimuli. This phenomenon may find applications in sensing and logic devices. (C) 2012 Elsevier B.V. All rights reserved. |
WOS记录号 | WOS:000304664500026 |
公开日期 | 2013-03-18 |
源URL | [http://202.127.1.142/handle/181331/7021] ![]() |
专题 | 上海技术物理研究所_上海技物所 |
推荐引用方式 GB/T 7714 | Bu, HJ,Gao, J,Hu, GJ,et al. Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method[J]. PHYSICA B-CONDENSED MATTER,2012,407(13). |
APA | Bu, HJ,Gao, J,Hu, GJ,&Dai, N.(2012).Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method.PHYSICA B-CONDENSED MATTER,407(13). |
MLA | Bu, HJ,et al."Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol-gel method".PHYSICA B-CONDENSED MATTER 407.13(2012). |
入库方式: OAI收割
来源:上海技术物理研究所
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