Effective g-factor in high-mobility InGaAs/InP quantum well
文献类型：期刊论文
| 作者 | Wei, LM; Zhou, YM; Yu, GL; Gao, KH; Liu, XZ; Lin, T; Guo, SL; Dai, N; Chu, JH; Guy, AD |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:12 |
| 英文摘要 | High-mobility In0.53Ga0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor. |
| WOS记录号 | WOS:000306394400056 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7037]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Wei, LM,Zhou, YM,Yu, GL,et al. Effective g-factor in high-mobility InGaAs/InP quantum well[J]. ACTA PHYSICA SINICA,2012,61(12). |
| APA | Wei, LM.,Zhou, YM.,Yu, GL.,Gao, KH.,Liu, XZ.,...&Guy, AD.(2012).Effective g-factor in high-mobility InGaAs/InP quantum well.ACTA PHYSICA SINICA,61(12). |
| MLA | Wei, LM,et al."Effective g-factor in high-mobility InGaAs/InP quantum well".ACTA PHYSICA SINICA 61.12(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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