BAND ALIGNMENT AND ATOM SEGREGATION OF LaYbO3 FILMS ON SILICON
文献类型：期刊论文
| 作者 | Su, WT; Huo, DX; Li, B |
| 刊名 | SURFACE REVIEW AND LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 19期号:2 |
| 英文摘要 | Ternary rare earth oxides are expected to be more promising high-k dielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion of LaYbO3, a new ternary rare earth oxide, are studied by X-ray photoelectron spectrum (XPS) and angle-resolved XPS, respectively. The band gap value for LaYbO3 crystalline film rises to 6.7 eV compared with 6.2 eV for amorphous film. Valence (Delta E-v) and conduction band (Delta E-c) offset are Delta E-v = 3.5 eV, Delta E-c = 1.6 eV for the amorphous film and Delta E-v = 3.3 eV, Delta E-c = 2.3 eV for the crystalline film. From elemental depth profile through high-k layer and silicon substrate, it is shown that La atom tends to diffuse into silicon substrate and piles up at oxide/silicon interface at high annealing temperature similar to 1000 degrees C. |
| WOS记录号 | WOS:000304427500005 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7085]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Su, WT,Huo, DX,Li, B. BAND ALIGNMENT AND ATOM SEGREGATION OF LaYbO3 FILMS ON SILICON[J]. SURFACE REVIEW AND LETTERS,2012,19(2). |
| APA | Su, WT,Huo, DX,&Li, B.(2012).BAND ALIGNMENT AND ATOM SEGREGATION OF LaYbO3 FILMS ON SILICON.SURFACE REVIEW AND LETTERS,19(2). |
| MLA | Su, WT,et al."BAND ALIGNMENT AND ATOM SEGREGATION OF LaYbO3 FILMS ON SILICON".SURFACE REVIEW AND LETTERS 19.2(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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