中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film

文献类型:期刊论文

作者Lin, T; Shang, LY; Zhou, WZ; Meng, XJ; Sun, JL; Yu, G; Guo, SL; Chu, JH
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2012
卷号106期号:3
英文摘要The surface transport properties of naturally oxidized p-type Hg0.776Cd0.224Te thin film were investigated in the magnetic-field region 0-14 T and in the temperature region 8-300 K. The Hall electron concentration increases with temperature, while the surface concentration of the two-dimensional electrons in the naturally oxidized surface, calculated by Shubnikov-de Haas oscillations, decreases as temperature increases at temperatures below 20 K. The contradiction and the extraordinary quantum Hall filling factors are accounted for by assuming extra bulk-like electrons in the surface region, which dominate the surface transport properties at temperatures over 8 K.
WOS记录号WOS:000300260600031
公开日期2013-03-18
源URL[http://202.127.1.142/handle/181331/7130]  
专题上海技术物理研究所_上海技物所
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GB/T 7714
Lin, T,Shang, LY,Zhou, WZ,et al. Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2012,106(3).
APA Lin, T.,Shang, LY.,Zhou, WZ.,Meng, XJ.,Sun, JL.,...&Chu, JH.(2012).Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,106(3).
MLA Lin, T,et al."Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 106.3(2012).

入库方式: OAI收割

来源:上海技术物理研究所

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