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Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films

文献类型:期刊论文

作者Bai, W; Chen, G; Zhu, JY; Yang, J; Lin, T; Meng, XJ; Tang, XD; Duan, CG; Chu, JH
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号100期号:8
英文摘要Dielectric responses and scaling behaviors of Aurivillius Bi6Ti3Fe2O18 (BTF2) multiferroic thin films were systemically detailed by the temperature-dependent dielectric/impedance spectroscopy. We clarified two dielectric relaxation processes presented in grain interior of the BTF2 films. One relaxation below similar to 500K was proposed to associate with the localized hopping process of carrier between Fe3+ and Fe2+ inside the grains. Another one above similar to 500K arose from the long-range movement of oxygen vacancies. The scaling behaviors implied that the distribution of relaxation times for oxygen vacancies was temperature independent while the dynamical processes for the hopping carriers presumably depended on temperature. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688033]
WOS记录号WOS:000300711200040
公开日期2013-03-18
源URL[http://202.127.1.142/handle/181331/7133]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Bai, W,Chen, G,Zhu, JY,et al. Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films[J]. APPLIED PHYSICS LETTERS,2012,100(8).
APA Bai, W.,Chen, G.,Zhu, JY.,Yang, J.,Lin, T.,...&Chu, JH.(2012).Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films.APPLIED PHYSICS LETTERS,100(8).
MLA Bai, W,et al."Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films".APPLIED PHYSICS LETTERS 100.8(2012).

入库方式: OAI收割

来源:上海技术物理研究所

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