Effects of P implantation and post-implantation annealing on defect formation in ZnO
文献类型：期刊论文
| 作者 | Wang, XJ; Chen, WM; Ren, F; Pearton, S; Buyanova, IA |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 111期号:4 |
| 英文摘要 | Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to examine the effects of P implantation and post-implantation annealing on defect formation in ZnO single crystals. From ODMR, the main defects created by ion implantation include oxygen and zinc vacancies as a well as a deep donor labeled as PD. The formation of the PD defect is likely promoted by the presence of P as it could only be detected in the P-containing ZnO. The V-O and PD centers are found to exhibit low thermal stability and can be annealed out at 800 degrees C. On the other hand, a new set of defects, such as Z, T, and D* centers, is detected after annealing. Based on measured spectral dependences of the ODMR signals, the V-O, V-Zn, and PD centers are shown to participate in spin-dependent recombination processes related to red emissions, whereas the Z, T, and D* centers are involved in radiative recombination over a wide spectral range of 1.55-2.5 eV. From the PL measurements, combined effects of implantation and annealing also lead to appearance of a new PL band peaking at similar to 3.156 eV, likely due to donor-acceptor-pair recombination. The formation of the involved deep acceptor is concluded to be facilitated by the presence of P. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3687919] |
| WOS记录号 | WOS:000300948600037 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7137]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Wang, XJ,Chen, WM,Ren, F,et al. Effects of P implantation and post-implantation annealing on defect formation in ZnO[J]. JOURNAL OF APPLIED PHYSICS,2012,111(4). |
| APA | Wang, XJ,Chen, WM,Ren, F,Pearton, S,&Buyanova, IA.(2012).Effects of P implantation and post-implantation annealing on defect formation in ZnO.JOURNAL OF APPLIED PHYSICS,111(4). |
| MLA | Wang, XJ,et al."Effects of P implantation and post-implantation annealing on defect formation in ZnO".JOURNAL OF APPLIED PHYSICS 111.4(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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