Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers
文献类型：期刊论文
| 作者 | Huang, CC; Xu, FJ; Song, J; Xu, ZY; Wang, JM; Zhu, R; Chen, G; Wang, XQ; Yang, ZJ; Shen, B |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 111期号:1 |
| 英文摘要 | Strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells (MQWs) grown on GaN/sapphire templates with either AlN/GaN supperlattices (SLs) or low-temperature AlN (LT-AlN) interlayers (ILs) between the MQWs and templates have been investigated. These two IL techniques can both effectively relieve the tensile strain in the MQWs, leading to crack-free surfaces and high crystalline quality. Further analysis shows that there are two distinct strain relief channels. In the case of adopting AlN/GaN SLs IL, microcracks and misfit dislocations account for strain relief in the MQWs. Microcracks are first generated in the IL, followed by activating formation of misfit dislocations. Then, the microcracks are immediately filled up by the subsequent epilayers. Contrastively, strain relief by using LT-AlN IL is mainly through the self relaxation process of the MQWs by surface roughening and strain compensation effect of LT-AlN IL. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676266] |
| WOS记录号 | WOS:000299127200128 |
| 公开日期 | 2013-03-18 |
| 源URL | [http://202.127.1.142/handle/181331/7211]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Huang, CC,Xu, FJ,Song, J,et al. Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers[J]. JOURNAL OF APPLIED PHYSICS,2012,111(1). |
| APA | Huang, CC.,Xu, FJ.,Song, J.,Xu, ZY.,Wang, JM.,...&Lu, W.(2012).Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers.JOURNAL OF APPLIED PHYSICS,111(1). |
| MLA | Huang, CC,et al."Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers".JOURNAL OF APPLIED PHYSICS 111.1(2012). |
入库方式： OAI收割
来源：上海技术物理研究所
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