中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the Peak-Shift Method

文献类型:期刊论文

作者Jingjing Zhang; Tao Zhang; Shishen Liu; Shidong Yuan; Yafang Jin; Sheng Yang
刊名Chinese Optics Letters
出版日期2013
卷号0期号:9
关键词Junction Impedance Currents Selecting Tester Initially Created Pulsed Spectrometer Driving
英文摘要Transient thermal impedance of GaN-based high-power white light emitting diodes (LEDs) is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature (JT) rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks are equivalent at pulsed and continuous currents. Moreover, the difference in peak wavelength when a LED is driven by pulsed and continuous currents initially decreases then increases with increasing pulse width. Thus, selecting an appropriate pulse width decreases errors in JT measurement.
学科主题红外系统与元部件
公开日期2014-11-05
源URL[http://202.127.1.142/handle/181331/7504]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Jingjing Zhang,Tao Zhang,Shishen Liu,et al. Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the Peak-Shift Method[J]. Chinese Optics Letters,2013,0(9).
APA Jingjing Zhang,Tao Zhang,Shishen Liu,Shidong Yuan,Yafang Jin,&Sheng Yang.(2013).Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the Peak-Shift Method.Chinese Optics Letters,0(9).
MLA Jingjing Zhang,et al."Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the Peak-Shift Method".Chinese Optics Letters 0.9(2013).

入库方式: OAI收割

来源:上海技术物理研究所

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