Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays
文献类型：期刊论文
| 作者 | Wei-DaHu; Xiao-ShuangChen; Zhen-HuaYe; A-LiFeng; FeiYin; BoZhang; LeiLiao; WeiLu |
| 刊名 | IEEE J SEL TOP QUANT
 |
| 出版日期 | 2013 |
| 卷号 | 19期号:5 |
| 关键词 | Laserbeaminducedcurrent Hgcdtelongwave Infrareddetector Junctiontransformation Devicesimulation |
| 英文摘要 | In this paper, experimental results of laserirradiance-dependent polarity inversion of laser beam induced current (LBIC) for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the ion-implantinduced junction transformation are proposed, and demonstrated using numerical simulations. The novel trap-related p-n junction transformation induced by ion implantation is observed under typical laser irradiances for low temperature. The implantation induced traps and Hg interstitial diffusion are key factors for inducing the LBIC coupling, polarity reversion, and junction broadening at different laser irradiances. The trap type, trap density, and junction configuration are extracted from the measured experiment data. The results provide the near room-temperature HgCdTe photovoltaic detector with a reliable reference on the junction reversion and broadening around implanted regions, as well as controlling the n-on-p junction formation for very long wavelength HgCdTe infrared detector pixels. |
| 学科主题 | 红外基础研究 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7702]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Wei-DaHu,Xiao-ShuangChen,Zhen-HuaYe,et al. Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays[J]. IEEE J SEL TOP QUANT,2013,19(5). |
| APA | Wei-DaHu.,Xiao-ShuangChen.,Zhen-HuaYe.,A-LiFeng.,FeiYin.,...&WeiLu.(2013).Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays.IEEE J SEL TOP QUANT,19(5). |
| MLA | Wei-DaHu,et al."Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays".IEEE J SEL TOP QUANT 19.5(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。