Far infrared reflection spectra of InAsxSb1-x (x=0-0.4) thin films
文献类型：期刊论文
| 作者 | L.Huang Z.F.Li P.P.Chen Y.H.ZhangandW.Lu |
| 刊名 | J.Appl.Phys
 |
| 出版日期 | 2013 |
| 卷号 | 113期号:21 |
| 关键词 | Carrierconcentration Indiumantimonides Latticevibrations Phonons-plasmons |
| 英文摘要 | A series of InAsxSb1-x ternary thin films (x = 0-0.4) has been studied in a far-infrared reflection experiment over the range of 50-4000 cm-1 at room temperature. The obtained spectra are fitted using a multi-oscillator model. Two typesof lattice vibration modes, InSb-like and InAs-like, plus one plasmon mode have been identified in x > 0 samples. The lattice vibration in these ternary alloy films shows a typical two-mode behavior. Within the studied fraction range, the InSb transverse-optical (TO) phonon frequency decreases with x, while the InAs TO frequency increases. A random-element-isodisplacement model has been employed to describe the phonon frequency changes. The fitted plasmon parameters have been used to extract the carrier concentrations and mobility. The carrier concentration increases monotonously with the increase of As fraction and is attributed to the bandgap narrowing effect. The mobility decreases with x, indicating an increased scattering. |
| 学科主题 | 红外基础研究 |
| WOS记录号 | WOS:000320674500013 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7726]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | L.Huang Z.F.Li P.P.Chen Y.H.ZhangandW.Lu. Far infrared reflection spectra of InAsxSb1-x (x=0-0.4) thin films[J]. J.Appl.Phys,2013,113(21). |
| APA | L.Huang Z.F.Li P.P.Chen Y.H.ZhangandW.Lu.(2013).Far infrared reflection spectra of InAsxSb1-x (x=0-0.4) thin films.J.Appl.Phys,113(21). |
| MLA | L.Huang Z.F.Li P.P.Chen Y.H.ZhangandW.Lu."Far infrared reflection spectra of InAsxSb1-x (x=0-0.4) thin films".J.Appl.Phys 113.21(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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