The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
文献类型：期刊论文
| 作者 | X.Z.Liu Y.G.Xu G.Yu L.M.Wei T.Lin S.L.Guo J.H.Chu W.Z.Zhou Y.G.ZhangandDavidJ.Lockwood |
| 刊名 | J.Appl.Phys
 |
| 出版日期 | 2013 |
| 卷号 | 113期号:3 |
| 关键词 | Quantumwells Magneticfields Carrierdensity Zeemaneffect 'iii-vsemiconductors |
| 英文摘要 | The magneotransport properties of a high carrier concentration and high mobility 20-nm thick In0.53Ga0.47As/In 0.52Al0.48As quantum well (QW) are investigated by tilt angle dependent Shubnikov-de Haas oscillations and by weak antilocalization (WAL) in an in-plane magnetic field. The effective g-factor g* and zero field spin splitting Δ 0 are extracted from tilt angle dependent beating pattern. We found that g* shows a dramatic reduction with increasing carrier density due to the increased effective band gap. Furthermore, an anomalously rapid suppression of the WAL effect with increasing in-plane magnetic field B|| is observed. This reveals that the total dephasing rate is not solely contributed by Zeeman splitting. The microroughness scattering in the QW is proposed to be another factor to cause the dephasing and thus responsible for this effect. |
| 学科主题 | 红外基础研究 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7734]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | X.Z.Liu Y.G.Xu G.Yu L.M.Wei T.Lin S.L.Guo J.H.Chu W.Z.Zhou Y.G.ZhangandDavidJ.Lockwood. The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement[J]. J.Appl.Phys,2013,113(3). |
| APA | X.Z.Liu Y.G.Xu G.Yu L.M.Wei T.Lin S.L.Guo J.H.Chu W.Z.Zhou Y.G.ZhangandDavidJ.Lockwood.(2013).The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement.J.Appl.Phys,113(3). |
| MLA | X.Z.Liu Y.G.Xu G.Yu L.M.Wei T.Lin S.L.Guo J.H.Chu W.Z.Zhou Y.G.ZhangandDavidJ.Lockwood."The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement".J.Appl.Phys 113.3(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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