Band gap tuning in HgTe through uniaxial strains
文献类型：期刊论文
| 作者 | HuxianZhao XiaoshuangChen JianpingLu HaiboShu WeiLu |
| 刊名 | Solid State Commun.
 |
| 出版日期 | 2013 |
| 卷号 | 166期号:0 |
| 关键词 | Hgte Dft Uniaxialstrain Electronicproperties |
| 英文摘要 | The impact of uniaxial strain along the [111] direction on the structural and electronic properties of bulk HgTe in the zinc blende is studied by DFT. Uniaxial strain can effectively manipulate the local lattice structure along the same direction. The transformation may be caused to form the graphite-like structure in large compression and the layered one under stretching. Meanwhile, the conductive band minimum (CBM) and valence band maximum (VBM) are gradually shifted to form the indirect band structures. Further, the band gap is opened in HgTe for the significant stretching, The uniaxial compression only changes the coordination of HgTe by maintaining the semi-metallic properties. |
| 学科主题 | 红外基础研究 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7746]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | HuxianZhao XiaoshuangChen JianpingLu HaiboShu WeiLu. Band gap tuning in HgTe through uniaxial strains[J]. Solid State Commun.,2013,166(0). |
| APA | HuxianZhao XiaoshuangChen JianpingLu HaiboShu WeiLu.(2013).Band gap tuning in HgTe through uniaxial strains.Solid State Commun.,166(0). |
| MLA | HuxianZhao XiaoshuangChen JianpingLu HaiboShu WeiLu."Band gap tuning in HgTe through uniaxial strains".Solid State Commun. 166.0(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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