Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain
文献类型：期刊论文
| 作者 | W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu |
| 刊名 | Opt Quant Electron
 |
| 出版日期 | 2013 |
| 卷号 | 45期号:7 |
| 关键词 | Plasmonicresonantabsorption Gratinggate Finitedifferencetimedomain (Fdtd)Numericalsimulation Plasmonwave Farinfraredterahertzdetection Ganhemts |
| 英文摘要 | The plasmonic resonant phenomenon in the terahertz wave band for GaN high electron mobility transistors is investigated by using a finite difference time domain method. Strong resonant absorptions can be obtained where a large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications. |
| 学科主题 | 红外基础研究 |
| WOS记录号 | WOS:000321764100022 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7760]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu. Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain[J]. Opt Quant Electron,2013,45(7). |
| APA | W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu.(2013).Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain.Opt Quant Electron,45(7). |
| MLA | W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu."Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain".Opt Quant Electron 45.7(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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