Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination
文献类型：期刊论文
| 作者 | N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU |
| 刊名 | Opt Quant Electron
 |
| 出版日期 | 2013 |
| 卷号 | 40期号:8 |
| 关键词 | Insbinfraredfocalplanearrays Numericalsimulation Quantumefficiency |
| 英文摘要 | The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths. |
| 学科主题 | 红外基础研究 |
| WOS记录号 | WOS:000321764100016 |
| 公开日期 | 2014-11-10 |
| 源URL | [http://202.127.1.142/handle/181331/7762]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU. Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination[J]. Opt Quant Electron,2013,40(8). |
| APA | N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU.(2013).Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination.Opt Quant Electron,40(8). |
| MLA | N.GUO W.D.HU X.S.CHEN C.MENG Y.Q.LV andW.LU."Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination".Opt Quant Electron 40.8(2013). |
入库方式： OAI收割
来源：上海技术物理研究所
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