中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure

文献类型:期刊论文

作者Zhang, Hui; Li, Jianfeng1; Dai, Jingru1; Corfield, Martin1; Liu, Xuejian; Liu, Yan; Huang, Zhengren; Johnson, Christopher Mark1
刊名IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
出版日期2018
卷号6期号:1页码:175
关键词Electronic packaging finite-element (FE) method material reliability planar power module power cycling X-ray computation tomography
ISSN号2168-6777
DOI10.1109/JESTPE.2017.2758901
英文摘要This paper proposes an advanced Si3N4 ceramic-based structure with through vias designed and filled with brazing alloy as a reliable interconnect solution in planar power modules. Finite-element (FE) modeling and simulation were first used to predict the potential of using the proposed Si3N4 ceramic-based structure to improve the heat dissipation and reliability of planar interconnects. Power cycling tests and nondestructive microstructural characterization were then performed on Si3N4 ceramic-based structures, flexible printed circuit boards (PCBs), and conventional Al wire interconnect samples to evaluate the FE predictions. Both the FE simulations and experimental tests were carried out on single Si diode samples where both the ceramic-based structures and flexible PCBs were bonded on the top sides of Si diodes with eutectic Sn-3.5Ag solder joints. The results obtained demonstrate that Si3N4 ceramic-based structures can significantly improve the reliability of planar interconnects. The experimental average lifetimes and FE simulated maximum creep strain accumulations for the ceramic-based structure and flexible PCB interconnect samples can reasonably be fitted to existing lifetime models for Sn-3.5Ag solder joints. Discrepancies between the models and experimental results can be attributed to defects and poor filling of the brazing alloy in the vias through the Si3N4 ceramic.
学科主题Engineering, Electrical & Electronic
WOS记录号WOS:000424079000015
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
资助机构This work was supported by the Engineering and Physical Sciences Research Council, U.K., through the Centre for Power Electronics (grants for the hub and components theme), under Grant EP/K035304/1 and Grant EP/K034804/1. Recommended for publication by Associate Editor Ron Hui. (Corresponding author: Jianfeng Li.) ; This work was supported by the Engineering and Physical Sciences Research Council, U.K., through the Centre for Power Electronics (grants for the hub and components theme), under Grant EP/K035304/1 and Grant EP/K034804/1. Recommended for publication by Associate Editor Ron Hui. (Corresponding author: Jianfeng Li.)
源URL[http://ir.sic.ac.cn/handle/331005/24452]  
专题中国科学院上海硅酸盐研究所
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China
2.Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England
推荐引用方式
GB/T 7714
Zhang, Hui,Li, Jianfeng,Dai, Jingru,et al. Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,2018,6(1):175, 187.
APA Zhang, Hui.,Li, Jianfeng.,Dai, Jingru.,Corfield, Martin.,Liu, Xuejian.,...&Johnson, Christopher Mark.(2018).Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure.IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,6(1),175.
MLA Zhang, Hui,et al."Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure".IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 6.1(2018):175.

入库方式: OAI收割

来源:上海硅酸盐研究所

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