Achieving High Quantum Efficiency Narrow-Band beta-Sialon:Eu2+ Phosphors for High-Brightness LCD Backlights by Reducing the Eu3+ Luminescence Killer
文献类型：期刊论文
| 作者 | Li, Shuxing; Wang, Le2; Tang, Daiming3; Cho, Yujin4; Liu, Xuejian5; Zhou, Xingtai6; Lu, Lu7; Zhang, Lin8; Takeda, Takashi; Hirosaki, Naoto |
| 刊名 | CHEMISTRY OF MATERIALS
 |
| 出版日期 | 2018 |
| 卷号 | 30期号:2页码:494 |
| ISSN号 | 0897-4756 |
| DOI | 10.1021/acs.chemmater.7b04605 |
| 英文摘要 | beta-Sialon:Eu2+ has been reported to be the most promising narrow-band green phosphor for wide color gamut LCD backlights, but the coexistence of the Eu3+ luminescence killer with the Eu2+ luminescence center limits its luminescence performance to a great extent. In this study, we propose a direct reduction strategy to successfully realize the reduction of Eu3+ to Eu2+ and, finally, increase the effective concentration of Eu2+ in the crystal lattice and greatly minimize the amount of Eu3+ on the particle surface. As a result, the luminescence of treated beta-sialon:Eu2+ is enhanced by 2.3 times, and the internal quantum efficiency significantly increases from 52.2 to 96.5%. The mechanisms for such large enhancements in luminescence are clarified by investigating the microstructure, luminescence spectra, valence state, concentration, and distribution of Eu using a variety of chemical analyses. We find that the low efficiency is ascribed to the coexistence of the Eu3+ luminescence killer with the Eu2+ luminescence center. The white LED backlight using the treated beta-sialon:Eu2+ demonstrates a high luminous efficacy of 136 lm W-1 (22.5% up) and a wide color gamut (similar to 96% National Television System Committee standard (NTSC)), which thus promises high brightness and energy saving. We believe that the strategy proposed in this work would also work for other luminescent materials containing mixed valence of dopants. |
| 学科主题 | Chemistry, Physical ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000423418000024 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | We are grateful for the financial support from the National Natural Science Foundation of China (Grant Nos. 5157223, 51561135015, and 51472087), the National Key Research and Development Program (MOST ; Grant No. 2017YFB0404301), the National Postdoctoral Program for Innovative Talents (Grant No. BX201700138), and JSPS KAKENHI (Grant No. 15K06448). Furthermore, we also give special thanks to the Shanghai Synchrotron Radiation Facility (SSRF) and Prof. Zheng Jiang and Mr. Ruo-Ou Yang for providing the XANES measurements. ; We are grateful for the financial support from the National Natural Science Foundation of China (Grant Nos. 5157223, 51561135015, and 51472087), the National Key Research and Development Program (MOST ; Grant No. 2017YFB0404301), the National Postdoctoral Program for Innovative Talents (Grant No. BX201700138), and JSPS KAKENHI (Grant No. 15K06448). Furthermore, we also give special thanks to the Shanghai Synchrotron Radiation Facility (SSRF) and Prof. Zheng Jiang and Mr. Ruo-Ou Yang for providing the XANES measurements. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24542]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Xiamen Univ, Coll Mat, Xiamen 361005, Peoples R China 2.Natl Inst Mat Sci, Sialon Grp, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 3.China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China 4.Natl Inst Mat Sci, Thermal Energy Mat Grp, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 5.Natl Inst Mat Sci, Nano Device Characterizat Grp, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 6.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Appl Phys, Ctr Thorium Molten Salts Reactor Syst, Shanghai 201800, Peoples R China 8.Beijing Yuji Xinguang Optoelect Technol Co Ltd, Beijing 101111, Peoples R China 9.Xian Hongyu Optoelect Co Ltd, Xian 710199, Shanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Shuxing,Wang, Le,Tang, Daiming,et al. Achieving High Quantum Efficiency Narrow-Band beta-Sialon:Eu2+ Phosphors for High-Brightness LCD Backlights by Reducing the Eu3+ Luminescence Killer[J]. CHEMISTRY OF MATERIALS,2018,30(2):494, 505. |
| APA | Li, Shuxing.,Wang, Le.,Tang, Daiming.,Cho, Yujin.,Liu, Xuejian.,...&Xie, Rong-Jun.(2018).Achieving High Quantum Efficiency Narrow-Band beta-Sialon:Eu2+ Phosphors for High-Brightness LCD Backlights by Reducing the Eu3+ Luminescence Killer.CHEMISTRY OF MATERIALS,30(2),494. |
| MLA | Li, Shuxing,et al."Achieving High Quantum Efficiency Narrow-Band beta-Sialon:Eu2+ Phosphors for High-Brightness LCD Backlights by Reducing the Eu3+ Luminescence Killer".CHEMISTRY OF MATERIALS 30.2(2018):494. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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