Synthesis and Thermoelectric Properties of Charge-Compensated SyPdxCo4-xSb12 Skutterudites
文献类型：期刊论文
| 作者 | Wan, Shun1; Qiu, Pengfei; Huang, Xiangyang; Song, Qingfeng1; Bai, Shengqiang; Shi, Xun; Chen, Lidong |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:1页码:625 |
| 关键词 | thermoelectric skutterudite charge-compensate S filling Pd doping |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.7b15124 |
| 英文摘要 | Recently, the electronegative elements (e.g., S, Se, Cl, and Br) filled skutterudites have attracted great attention in thermoelectric community. Via doping of some electron donors at the Sb sites, these electronegative elements can be filled into the voids of CoSb3 forming thermodynamically stable compounds, which greatly extends the scope of filled skutterudites. In this study, we show that doping appropriate elements at the Co sites can also stabilize the electronegative elements in the voids of CoSb3. A series of SyPdxCo4-xSb12 compounds were successfully fabricated by a traditional solid state reaction method combined with a spark plasma sintering technique. The phase composition and electrical and thermal transport properties were systematically characterized, and the related mechanisms were deeply discussed. It is found that the charge compensation between Pd doping and S filling is the main reason for the formation of thermodynamically stable SyPdxCo4-xSb12 compounds. Filling S element in the voids of CoSb3 provides additional holes to reduce the carrier concentration while scarcely affecting the carrier mobility. However, doping Pd at the Co sites not only changes the carrier scattering mechanism but also deteriorates the carrier mobility. Low lattice thermal conductivities are observed in these SyPdxCo4-xSb12 compounds, which are attributed to the low resonant frequency of the S element. Finally, a maximal figure of merit of 0.85 is obtained for S0.05Pd0.25Co3.75Sb12 at 700 K. |
| 学科主题 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000422814400067 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | This work is supported by the National Natural Science Foundation of China (NSFC) under Grants 11234012 and 51625205, the Shanghai Government (Grants 15JC1400301 and 16XD1403900), and Youth Innovation Promotion Association, CAS (Grant 2016232). ; This work is supported by the National Natural Science Foundation of China (NSFC) under Grants 11234012 and 51625205, the Shanghai Government (Grants 15JC1400301 and 16XD1403900), and Youth Innovation Promotion Association, CAS (Grant 2016232). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24557]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wan, Shun,Qiu, Pengfei,Huang, Xiangyang,et al. Synthesis and Thermoelectric Properties of Charge-Compensated SyPdxCo4-xSb12 Skutterudites[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(1):625, 634. |
| APA | Wan, Shun.,Qiu, Pengfei.,Huang, Xiangyang.,Song, Qingfeng.,Bai, Shengqiang.,...&Chen, Lidong.(2018).Synthesis and Thermoelectric Properties of Charge-Compensated SyPdxCo4-xSb12 Skutterudites.ACS APPLIED MATERIALS & INTERFACES,10(1),625. |
| MLA | Wan, Shun,et al."Synthesis and Thermoelectric Properties of Charge-Compensated SyPdxCo4-xSb12 Skutterudites".ACS APPLIED MATERIALS & INTERFACES 10.1(2018):625. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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