中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor

文献类型:期刊论文

作者Li, Binghan1,2; Long, Ruiying1,2; Xia, Yu; Mi, Qixi
刊名ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
出版日期2018
卷号57期号:40页码:13154
关键词cesium perovskite phases semiconductors structure-activity relationships tin
ISSN号1433-7851
DOI10.1002/anie.201807674
英文摘要Hybrid organic-inorganic perovskites, especially methylammonium lead triiodide (MAPbI(3)), are intensely studied for their optoelectronic properties. The organic MA(+) cation is held responsible for the superior performance of MAPbI(3) but also its instability toward moisture and heat. To explore compositions beyond MAPbI(3), we performed experiments and calculations on two isomorphous perovskites CsSnBr3 and MASnBr(3). CsSnBr3 is slightly smaller than MASnBr(3) in cell dimension, but outperforms MASnBr(3) in band gap energy, charge-carrier reduced effective mass, and optical dielectric constant all by approximate to 19%. These merits accumulate to drastically cut the exciton binding energy from 33 meV for MASnBr(3) to 19.6 meV for CsSnBr3, making CsSnBr3 a black, free-carrier semiconductor. CsSnBr3 also exhibits distinctly higher stability toward moisture and heat than its organic counterparts. These advantages suggest ecofriendly applications for CsSnBr3, such as tandem solar cells and direct X-ray detectors.
学科主题Chemistry, Multidisciplinary
WOS记录号WOS:000445445700026
出版者WILEY-V C H VERLAG GMBH
资助机构This work is financially supported by a State Key Research Project (No. 2016YFA0204000) from the Ministry of Science and Technology of China and a Shell-CAS Frontier Sciences Program (No. PT78963), and technically supported by the High-Performance Computing (HPC) Platform of Shanghai-Tech University. The authors thank Prof. Jiamin Xue and Mr. Chenglei Guo for electrical testing equipment, Prof. Gang Li and Ms. Yunyouyou Xia for assistance with electronic band structure calculations, as well as Dr. Na Yu for single-crystal X-ray diffraction. ; This work is financially supported by a State Key Research Project (No. 2016YFA0204000) from the Ministry of Science and Technology of China and a Shell-CAS Frontier Sciences Program (No. PT78963), and technically supported by the High-Performance Computing (HPC) Platform of Shanghai-Tech University. The authors thank Prof. Jiamin Xue and Mr. Chenglei Guo for electrical testing equipment, Prof. Gang Li and Ms. Yunyouyou Xia for assistance with electronic band structure calculations, as well as Dr. Na Yu for single-crystal X-ray diffraction.
源URL[http://ir.sic.ac.cn/handle/331005/24645]  
专题中国科学院上海硅酸盐研究所
作者单位1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Li, Binghan,Long, Ruiying,Xia, Yu,et al. All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2018,57(40):13154, 13158.
APA Li, Binghan,Long, Ruiying,Xia, Yu,&Mi, Qixi.(2018).All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,57(40),13154.
MLA Li, Binghan,et al."All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 57.40(2018):13154.

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来源:上海硅酸盐研究所

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