Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties
文献类型：期刊论文
| 作者 | Xu, Zhi-Xue; Yan, Jian-Min; Xu, Meng; Guo, Lei; Chen, Ting -Wei; Gao, Guan-Yin; Dong, Si-Ning; Zheng, Ming; Zhang, Jin-Xing; Wang, Yu |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:38页码:32809 |
| 关键词 | ferroelectric field effect device ferroelectric single crystal electronic properties tin dioxide thin film magnetoresistance |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.8b09170 |
| 英文摘要 | We report the fabrication of 0.71Pb-(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-0.29PT)-based ferroelec-tric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO2) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (similar to 330%) of the SnO2:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magneto resistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO2:Co films. Furthermore, we realized multilevel resistance states of the SnO2:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices. |
| 学科主题 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000446142100109 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | This work was supported by the National Natural Science Foundation of China (Grant Nos. 51572278, 51790491, 51332007, and 11574126) and the National Key Research and Development Plan (Grant Nos. 2016YFA0300103 and 2016YFA0302300). Support from Jiangxi Key Laboratory for Two-Dimensional Materials and Jiangxi Engineering Laboratory for Thin Films and Devices is also acknowledged. ; This work was supported by the National Natural Science Foundation of China (Grant Nos. 51572278, 51790491, 51332007, and 11574126) and the National Key Research and Development Plan (Grant Nos. 2016YFA0300103 and 2016YFA0302300). Support from Jiangxi Key Laboratory for Two-Dimensional Materials and Jiangxi Engineering Laboratory for Thin Films and Devices is also acknowledged. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24666]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.[Xu, Zhi-Xue 2.Yan, Jian-Min 3.Xu, Meng 4.Guo, Lei 5.Zheng, Ming 6.Luo, Hao-Su 7.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 8.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 9.[Chen, Ting -Wei 10.Wang, Yu |
| 推荐引用方式 GB/T 7714 | Xu, Zhi-Xue,Yan, Jian-Min,Xu, Meng,et al. Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(38):32809, 32817. |
| APA | Xu, Zhi-Xue.,Yan, Jian-Min.,Xu, Meng.,Guo, Lei.,Chen, Ting -Wei.,...&Zheng, Ren-Kui.(2018).Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.ACS APPLIED MATERIALS & INTERFACES,10(38),32809. |
| MLA | Xu, Zhi-Xue,et al."Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties".ACS APPLIED MATERIALS & INTERFACES 10.38(2018):32809. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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