中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes

文献类型:期刊论文

作者Zheng, Jianyun; Lyu, Yanhong; Xie, Chao; Wang, Ruilun; Tao, Li; Wu, Haibo1; Zhou, Huaijuan1; Jiang, Sanping2,3; Wang, Shuangyin
刊名ADVANCED MATERIALS
出版日期2018
卷号30期号:31
ISSN号0935-9648
关键词charge separation and transfer doping oxygen defects plasma protection layers
DOI10.1002/adma.201801773
英文摘要Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx/Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (eta(sep)) of approximate to 81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of approximate to 29.1 mA cm(-2). On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx-based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes.
学科主题Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000443807400033
资助机构The authors are grateful to the National Natural Science Foundation of China (51402100 and 21573066), the Provincial Natural Science Foundation of Hunan (2016JJ1006 and 2016TP1009), and the Shanghai Sailing Program (17YF1429800). ; The authors are grateful to the National Natural Science Foundation of China (51402100 and 21573066), the Provincial Natural Science Foundation of Hunan (2016JJ1006 and 2016TP1009), and the Shanghai Sailing Program (17YF1429800).
源URL[http://ir.sic.ac.cn/handle/331005/24745]  
专题中国科学院上海硅酸盐研究所
作者单位1.Hunan Univ, State Key Lab Chem Biosensing & Chemometr, Coll Chem & Chem Engn, Changsha 410082, Hunan, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
3.Curtin Univ, Fuels & Energy Technol Inst, Perth, WA 6102, Australia
4.Curtin Univ, Dept Chem Engn, Perth, WA 6102, Australia
推荐引用方式
GB/T 7714
Zheng, Jianyun,Lyu, Yanhong,Xie, Chao,et al. Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes[J]. ADVANCED MATERIALS,2018,30(31).
APA Zheng, Jianyun.,Lyu, Yanhong.,Xie, Chao.,Wang, Ruilun.,Tao, Li.,...&Wang, Shuangyin.(2018).Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes.ADVANCED MATERIALS,30(31).
MLA Zheng, Jianyun,et al."Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes".ADVANCED MATERIALS 30.31(2018).

入库方式: OAI收割

来源:上海硅酸盐研究所

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