Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure
文献类型：期刊论文
| 作者 | Zhang, D.; Li, T. R.; Zhou, J. W.; Jiang, Y. C.; Ren, B.; Huang, J.; Zhang, J. M.; Wang, L.; Gao, J.; Wang, L. J. |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2018 |
| 卷号 | 87页码:52 |
| 关键词 | Asymmetric resistive switching FIBJ Amorphous carbon Micro-gap SCLC theory |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2018.05.021 |
| 英文摘要 | Using a simple fields induced mass motion method, Au/a-C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of > 4, stable endurance of > 200 cycles, and good retention of > 10(5) s, were achieved at the read voltage of -3.6 V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour. |
| 学科主题 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| WOS记录号 | WOS:000441856500005 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | This work was financially supported by the National Key Basic Research Program of China (973 project No. 2014CB921002) and National Natural Science Foundation of China (Grant Nos. 11304193, 11574227, 61176072, 11504254). The authors also acknowledge the support of the Shanghai Municipal Education Commission (Peak Discipline Construction Program), PAPD, USTS Cooperative Innovation Center, and Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611). The authors gratefully thank the Instrumental Analysis and Research Center of Shanghai University for the Raman work carried out there. ; This work was financially supported by the National Key Basic Research Program of China (973 project No. 2014CB921002) and National Natural Science Foundation of China (Grant Nos. 11304193, 11574227, 61176072, 11504254). The authors also acknowledge the support of the Shanghai Municipal Education Commission (Peak Discipline Construction Program), PAPD, USTS Cooperative Innovation Center, and Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611). The authors gratefully thank the Instrumental Analysis and Research Center of Shanghai University for the Raman work carried out there. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24756]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.[Zhang, D. 2.Li, T. R. 3.Zhou, J. W. 4.Ren, B. 5.Huang, J. 6.Wang, L. 7.Wang, L. J.] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China 8.[Jiang, Y. C. 9.Gao, J.] Suzhou Univ Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China 10.[Jiang, Y. C. |
| 推荐引用方式 GB/T 7714 | Zhang, D.,Li, T. R.,Zhou, J. W.,et al. Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure[J]. MICROELECTRONICS RELIABILITY,2018,87:52, 56. |
| APA | Zhang, D..,Li, T. R..,Zhou, J. W..,Jiang, Y. C..,Ren, B..,...&Wang, L. J..(2018).Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure.MICROELECTRONICS RELIABILITY,87,52. |
| MLA | Zhang, D.,et al."Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure".MICROELECTRONICS RELIABILITY 87(2018):52. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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