Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
文献类型：期刊论文
| 作者 | Liu, Xiaohua; Zhou, Dayu; Guan, Yan; Li, Shuaidong; Cao, Fei1; Dong, Xianlin1 |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2018 |
| 卷号 | 154页码:190 |
| 关键词 | Hafnium oxide Ferroelectric Antiferroelectric Endurance Phase transition |
| ISSN号 | 1359-6454 |
| DOI | 10.1016/j.actamat.2018.05.033 |
| 英文摘要 | Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2 films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2 thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 学科主题 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS记录号 | WOS:000437968900018 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | This work was supported by the National Natural Science Foundation of China (Grant Nos. NSFC 51672032, 51272034) and the Fundamental Research Funds for the Central Universities of China (No. DUT17ZD211). The authors gratefully acknowledge Tony Schenk and Uwe Schroeder (NaMLab gGmbH/TU Dresden, Germany) as well as Johannes Mueller (GlobalFoundries, Germany), for preparation of the samples and fruitful discussions. ; This work was supported by the National Natural Science Foundation of China (Grant Nos. NSFC 51672032, 51272034) and the Fundamental Research Funds for the Central Universities of China (No. DUT17ZD211). The authors gratefully acknowledge Tony Schenk and Uwe Schroeder (NaMLab gGmbH/TU Dresden, Germany) as well as Johannes Mueller (GlobalFoundries, Germany), for preparation of the samples and fruitful discussions. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24768]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Xiaohua,Zhou, Dayu,Guan, Yan,et al. Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction[J]. ACTA MATERIALIA,2018,154:190, 198. |
| APA | Liu, Xiaohua,Zhou, Dayu,Guan, Yan,Li, Shuaidong,Cao, Fei,&Dong, Xianlin.(2018).Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction.ACTA MATERIALIA,154,190. |
| MLA | Liu, Xiaohua,et al."Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction".ACTA MATERIALIA 154(2018):190. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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