Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O-3 antiferroelectric thin-film capacitors
文献类型:期刊论文
作者 | Lin, Zhengjie1; Chen, Ying; Liu, Zhen; Wang, Genshui; Remiens, Denis2; Dong, Xianlin |
刊名 | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY |
出版日期 | 2018 |
卷号 | 38期号:9页码:3177 |
ISSN号 | 0955-2219 |
关键词 | Energy storage Antiferroelectric Thin-film PLZST |
DOI | 10.1016/j.jeurceramsoc.2018.03.004 |
英文摘要 | In this work, high performance (Pb0.97L-a(0.02))(Zr0.66Sn0.23Ti0.1)O-3 polycrystalline antiferroelectric thin-film was successfully fabricated on (La0.7Sr0.3)MnO3/Al2O3(0001) substrate via a cost-effectively chemical solution method. A large recoverable energy storage density (W-re) of 46.3 J/cm(3) and high efficiency (eta) of 84% were realized simultaneously under an electric field of 4 MV/cm by taking full advantage of the linear dielectric response after the electric field induced antiferroelectric-ferroelectric transition. Moreover, the PLZST thin-film displayed high temperature stability. With increasing temperature from 300 K to 380 K, the W-re decreased only 1.3%. The film also exhibited good fatigue endurance up to 1 x 10(5) cycling under an electric field of 2.2 MV/cm. Our work underlines the importance of the interface quality between the film and the substrate and the important role of linear dielectric answer after saturation in the improvement of the energy storage density and efficiency of antiferroelectric materials. |
学科主题 | Materials Science, Ceramics |
出版者 | ELSEVIER SCI LTD |
WOS记录号 | WOS:000433014200016 |
资助机构 | This work was supported by the National Natural Science Foundation of China (Nos. U1530156 and 11774366), International Partnership Program of Chinese Academy of Sciences (Grant No. GJHZ1821), Chinese Academy of Sciences President's International Fellowship Initiative (Grant No. 2017VEA0002), and Shanghai Sailing Program (No. 17YF1429700). ; This work was supported by the National Natural Science Foundation of China (Nos. U1530156 and 11774366), International Partnership Program of Chinese Academy of Sciences (Grant No. GJHZ1821), Chinese Academy of Sciences President's International Fellowship Initiative (Grant No. 2017VEA0002), and Shanghai Sailing Program (No. 17YF1429700). |
源URL | [http://ir.sic.ac.cn/handle/331005/24792] |
专题 | 中国科学院上海硅酸盐研究所 |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China 3.Univ Sci & Technol Lille, UMR CNRS 8520, Inst Elect Microelect & Nanotechnol IEMN DOAE, F-59652 Villeneuve Dascq, France |
推荐引用方式 GB/T 7714 | Lin, Zhengjie,Chen, Ying,Liu, Zhen,et al. Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O-3 antiferroelectric thin-film capacitors[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2018,38(9):3177, 3181. |
APA | Lin, Zhengjie,Chen, Ying,Liu, Zhen,Wang, Genshui,Remiens, Denis,&Dong, Xianlin.(2018).Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O-3 antiferroelectric thin-film capacitors.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,38(9),3177. |
MLA | Lin, Zhengjie,et al."Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O-3 antiferroelectric thin-film capacitors".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 38.9(2018):3177. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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