Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition
文献类型：期刊论文
| 作者 | Di, Wenqi1; Liu, Fang; Lin, Tie1; Kong, Hongfeng1; Meng, Caimin1; Zhang, Wenbin2; Chen, Ying2; Hou, Yun1 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2018 |
| 卷号 | 447页码:287 |
| 关键词 | Spinel films Structural properties Electrical properties Pulsed laser deposition |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2018.03.200 |
| 英文摘要 | Mn1.56Co0.96Ni0.48O4 ( MCNO) spinel films were obtained on Al2O3 substrates by pulsed laser deposition method. The effects of oxygen partial pressure on structural and electrical properties of MCNO thin films were investigated. According to the X-ray diffraction analysis and the atomic force microscopy images, the oxygen partial pressure has influence on the crystallization of MCNO films. XPS spectra reveal that the oxygen partial pressure affects the proportion of the polyvalent manganese ions. By analyzing the distribution of manganese ions and the thermal potential, it was verified that the prepared MCNO films are p-type semiconductor. The resistivity of MCNO thin films grown at 600 degrees C is a change of U-type with the increasing of oxygen partial pressure. MCNO films with good characteristics can be deposited in the optimum oxygen partial pressure range of 5.5 x 10(-3) Pa to 6.5 x 10(-3) Pa, which is desirable for the favorable performance of thermistor devices. (C) 2018 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:000432795500032 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | This work was supported by National Natural Science Foundation of China (No. 61275111). ; This work was supported by National Natural Science Foundation of China (No. 61275111). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24801]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Di, Wenqi,Liu, Fang,Lin, Tie,et al. Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition[J]. APPLIED SURFACE SCIENCE,2018,447:287, 291. |
| APA | Di, Wenqi.,Liu, Fang.,Lin, Tie.,Kong, Hongfeng.,Meng, Caimin.,...&Hou, Yun.(2018).Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition.APPLIED SURFACE SCIENCE,447,287. |
| MLA | Di, Wenqi,et al."Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition".APPLIED SURFACE SCIENCE 447(2018):287. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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