Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics
文献类型：期刊论文
| 作者 | Zhang, Faqiang; Wahyudi, Olivia; Liu, Zhifu; Gu, Hui1; Li, Yongxiang2 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2018 |
| 卷号 | 753页码:54 |
| ISSN号 | 0925-8388 |
| 关键词 | Abnormal intergrowth structure High temperature piezoelectrics Bismuth-layered ferroelectrics Bi3TiNbO9 Bi4Ti3O12 |
| DOI | 10.1016/j.jallcom.2018.04.134 |
| 英文摘要 | We firstly report an abnormal intergrowth bismuth layer-structured phase, (Bi3TiNbO9)(1)(Bi4Ti3O12)(2), or BTN1BiT2, with non-equal parent blocks. The HRTEM analysis shows that such compound has a longrange-ordered -233- sequence. The crystal structure has been solved in orthorhombic space group A2(1)am with a = 5.458 angstrom, b = 5.415 angstrom and c = 91.03 angstrom. Double dielectric peaks at 668 degrees C and 760 degrees C were observed. The thermal stable piezoelectric activity of d(33) = 11.6-13.6 pC/N up to 600 degrees C suggests that the BTN1BiT2 ceramic is a good candidate for piezoelectric device using in high temperature. This work indicates the universality of such abnormal structures and it will obviously expand Aurivillius family for future applications. (C) 2018 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000432674100009 |
| 资助机构 | The authors would like to acknowledge the support by the National Natural Science Foundation of China (No. 51172257, No. 51502325), and the Ministry of Science and Technology of China through 973-Project (2015CB654604, 2015CB654605). ; The authors would like to acknowledge the support by the National Natural Science Foundation of China (No. 51172257, No. 51502325), and the Ministry of Science and Technology of China through 973-Project (2015CB654604, 2015CB654605). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24813]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 2.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China 3.RMIT Univ, Sch Engn, Melbourne, Vic 3001, Australia |
| 推荐引用方式 GB/T 7714 | Zhang, Faqiang,Wahyudi, Olivia,Liu, Zhifu,et al. Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,753:54, 59. |
| APA | Zhang, Faqiang,Wahyudi, Olivia,Liu, Zhifu,Gu, Hui,&Li, Yongxiang.(2018).Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics.JOURNAL OF ALLOYS AND COMPOUNDS,753,54. |
| MLA | Zhang, Faqiang,et al."Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics".JOURNAL OF ALLOYS AND COMPOUNDS 753(2018):54. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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