Enhanced Thermoelectric Performance in n-Type Bi2Te3-Based Alloys via Suppressing Intrinsic Excitation
文献类型：期刊论文
| 作者 | Hao, Feng1; Xing, Tong2; Qiu, Pengfei; Hu, Ping2; Wei, Tianran; Ren, Dudi; Shi, Xun; Chen, Lidong |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:25页码:21372 |
| 关键词 | thermoelectric bismuth telluride intrinsic excitation minority carrier power generation |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.8b06533 |
| 英文摘要 | Currently, the application of thermoelectric power generators based on Bi2Te3-based alloys for the recovery of low-quality waste heat is still limited because of the aggravated intrinsic excitation of the material at elevated temperatures. In this study, excessive Te and dopant I are introduced to the n-type Bi2Te2.4Se0.6 material with the purpose of suppressing its intrinsic excitation and improving the thermoelectric performance at elevated temperatures. These Te and I atoms act as electron donors to effectively reduce the density of minority carriers (holes) and weaken their negative contribution to the Seebeck coefficient. Likewise, the initial band structure and the carrier scattering mechanism are scarcely altered. Similar to the p-type Bi2Te3-based alloys, we found the "conductivity-limiting" mechanism is also well obeyed in the present n-type Bi2Te2.4Se0.6-based materials. The reduced minority carrier partial electrical conductivity in these Te-excessive and I-doped Bi2Te2.4Se0.6 samples significantly decreases the bipolar thermal conductivity, leading to lowered total thermal conductivity at elevated temperatures. Finally, peak zT is successfully shifted up to higher temperatures for these Te-excessive and I-doped Bi2Te2.4Se0.6 samples. A maximum zT of 1.0 at 400 K and an average zT of 0.8 at 300-600 K have been realized in Te-excessive Bi2Te2.41Se0.6. |
| 学科主题 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000437811400039 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | This work was supported by the National Natural Science Foundation of China (NSFC) under the no. 51625205, the Key Research Program of Chinese Academy of Sciences (grant no. KFZD-SW-421), the International S&T Cooperation Program of China (2015DFA51050), and the Program of Shanghai Subject Chief Scientist (16XD1403900). P.Q. thanks the support by the Youth Innovation Promotion Association of CAS under grant no. 2016232. ; This work was supported by the National Natural Science Foundation of China (NSFC) under the no. 51625205, the Key Research Program of Chinese Academy of Sciences (grant no. KFZD-SW-421), the International S&T Cooperation Program of China (2015DFA51050), and the Program of Shanghai Subject Chief Scientist (16XD1403900). P.Q. thanks the support by the Youth Innovation Promotion Association of CAS under grant no. 2016232. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24854]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Semicond Mfg Int Corp, 18 Zhangjiang Rd, Shanghai 201203, Peoples R China 3.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao, Feng,Xing, Tong,Qiu, Pengfei,et al. Enhanced Thermoelectric Performance in n-Type Bi2Te3-Based Alloys via Suppressing Intrinsic Excitation[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(25):21372, 21380. |
| APA | Hao, Feng.,Xing, Tong.,Qiu, Pengfei.,Hu, Ping.,Wei, Tianran.,...&Chen, Lidong.(2018).Enhanced Thermoelectric Performance in n-Type Bi2Te3-Based Alloys via Suppressing Intrinsic Excitation.ACS APPLIED MATERIALS & INTERFACES,10(25),21372. |
| MLA | Hao, Feng,et al."Enhanced Thermoelectric Performance in n-Type Bi2Te3-Based Alloys via Suppressing Intrinsic Excitation".ACS APPLIED MATERIALS & INTERFACES 10.25(2018):21372. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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