The Effect of Light Intensity, Temperature, and Oxygen Pressure on the Photo-Oxidation Rate of Bare PbS Quantum Dots
文献类型：期刊论文
| 作者 | Liu, Huiyan1,2; Dong, Qian3; Lopez, Rene3 |
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2018 |
| 卷号 | 8期号:5 |
| 关键词 | PbS quantum dots photo-oxidation kinetics of oxidation photoluminescence |
| ISSN号 | 2079-4991 |
| DOI | 10.3390/nano8050341 |
| 英文摘要 | The oxidation speed of PbS quantum dots has been a subject of controversy for some time. In this study, we reveal the precise functional form of the oxidation rate constant for bare quantum dots through analysis of their photoluminescence as a function of temperature, oxygen pressure, and excitation-laser intensity. The combined effect of these factors results in a reduced energy barrier that allows the oxidation to proceed at a high rate. Each absorbed photon is found to have a 10(-8) probability of oxidizing a PbS atomic pair. This highlights the importance of photo-excitation on the speed of the oxidation process, even at low illumination conditions. The procedure used here may set up a quantitative standard useful for characterizing the stability of quantum dots coated with ligands/linkers, and to compare different protection schemes in a fair quantitative way. |
| 学科主题 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000435198300072 |
| 出版者 | MDPI |
| 资助机构 | This research was carried out with the financial support of Shanghaitech University. This research received no external funding. ; This research was carried out with the financial support of Shanghaitech University. This research received no external funding. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24938]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ North Carolina Chapel Hill, Dept Appl Phys Sci, Chapel Hill, NC 27599 USA |
| 推荐引用方式 GB/T 7714 | Liu, Huiyan,Dong, Qian,Lopez, Rene. The Effect of Light Intensity, Temperature, and Oxygen Pressure on the Photo-Oxidation Rate of Bare PbS Quantum Dots[J]. NANOMATERIALS,2018,8(5). |
| APA | Liu, Huiyan,Dong, Qian,&Lopez, Rene.(2018).The Effect of Light Intensity, Temperature, and Oxygen Pressure on the Photo-Oxidation Rate of Bare PbS Quantum Dots.NANOMATERIALS,8(5). |
| MLA | Liu, Huiyan,et al."The Effect of Light Intensity, Temperature, and Oxygen Pressure on the Photo-Oxidation Rate of Bare PbS Quantum Dots".NANOMATERIALS 8.5(2018). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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