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Room-temperature ductile inorganic semiconductor

文献类型：期刊论文

作者Shi, Xun; Chen, Hongyi1; Hao, Feng2; Liu, Ruiheng; Wang, Tuo2; Qiu, Pengfei; Burkhardt, Ulrich3; Grin, Yuri3; Chen, Lidong
刊名NATURE MATERIALS
出版日期2018
卷号17期号:5页码:421
ISSN号1476-1122
DOI10.1038/s41563-018-0047-z
英文摘要Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic alpha-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.
学科主题Chemistry, Physical ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
出版者NATURE PUBLISHING GROUP
WOS记录号WOS:000430942800018
资助机构We thank K. Lu at the Institute of Metal Research for helpful discussions. This work is supported by the National Natural Science Foundation of China (NSFC) under grant numbers 51625205 and 51632010, the Key Research Program of the Chinese Academy of Sciences (grant number KFZD-SW-421) and the Shanghai Government (grant number 15JC1400301 and 16XD1403900). ; We thank K. Lu at the Institute of Metal Research for helpful discussions. This work is supported by the National Natural Science Foundation of China (NSFC) under grant numbers 51625205 and 51632010, the Key Research Program of the Chinese Academy of Sciences (grant number KFZD-SW-421) and the Shanghai Government (grant number 15JC1400301 and 16XD1403900).
源URL[http://ir.sic.ac.cn/handle/331005/24947]  
专题中国科学院上海硅酸盐研究所
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China
2.Shanghai Tech Univ, Shanghai, Peoples R China
3.Univ Chinese Acad Sci, Beijing, Peoples R China
4.Max Planck Inst Chem Phys Fester Stoffe, Dresden, Germany
推荐引用方式
GB/T 7714		 Shi, Xun,Chen, Hongyi,Hao, Feng,et al. Room-temperature ductile inorganic semiconductor[J]. NATURE MATERIALS,2018,17(5):421, +.
APA Shi, Xun.,Chen, Hongyi.,Hao, Feng.,Liu, Ruiheng.,Wang, Tuo.,...&Chen, Lidong.(2018).Room-temperature ductile inorganic semiconductor.NATURE MATERIALS,17(5),421.
MLA Shi, Xun,et al."Room-temperature ductile inorganic semiconductor".NATURE MATERIALS 17.5(2018):421.

入库方式： OAI收割

来源：上海硅酸盐研究所

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