Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C
文献类型：期刊论文
| 作者 | Su, Bizhe; Liang, Hanqin; Liu, Guiling; Huang, Zhengren; Liu, Xuejian; Chen, Zhongming; Yu, Denis Y. W. |
| 刊名 | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
 |
| 出版日期 | 2018 |
| 卷号 | 38期号:5页码:2289 |
| 关键词 | SiC ceramics Ion irradiation Damage development |
| ISSN号 | 0955-2219 |
| DOI | 10.1016/j.jeurceramsoc.2017.12.050 |
| 英文摘要 | Irradiation damage of the materials depends on the irradiation dose and the intrinsic property of the material. In this paper, the high purity hot pressing sintered SiC ceramics with very few second phase and excellent crystallinity were prepared as the target materials, and the high irradiation dose up to 0.95 and 3.16 dpa respectively were chosen. The as-sintered SiC ceramics were irradiated with a 160 keV Ar ion beam at 600 degrees C. X-ray photoelectron spectroscopy, Raman spectrum, transmission electron microscopy and nanoindentation tests were utilized to analyze the microstructure variations on the surface of irradiated SiC, and it was found that the irradiated crystals kept crystallinity, although amorphization of SiC was generated with 10-25 nm depth, following with a mixture of point defect clusters and extended defects. Furthermore, it is also evident that there is a balance between irradiated-induced damages buildup and dynamic annealing of defects in high temperature. |
| 学科主题 | Materials Science, Ceramics |
| WOS记录号 | WOS:000426029700004 |
| 出版者 | ELSEVIER SCI LTD |
| 资助机构 | The authors express their gratitude for financial support from the Shanghai Sailing Program (No. 16YF1412900). The authors appreciate the Laboratory of 320 kV High-voltage Platform in Institute of Modern Physics, CAS for ion implantation. ; The authors express their gratitude for financial support from the Shanghai Sailing Program (No. 16YF1412900). The authors appreciate the Laboratory of 320 kV High-voltage Platform in Institute of Modern Physics, CAS for ion implantation. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/24964]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Su, Bizhe; Yu, Denis Y. W.] City Univ Hong Kong, Sch Energy & Environm, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Su, Bizhe,Liang, Hanqin,Liu, Guiling,et al. Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2018,38(5):2289, 2296. |
| APA | Su, Bizhe.,Liang, Hanqin.,Liu, Guiling.,Huang, Zhengren.,Liu, Xuejian.,...&Yu, Denis Y. W..(2018).Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,38(5),2289. |
| MLA | Su, Bizhe,et al."Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 38.5(2018):2289. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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