中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

文献类型:期刊论文

作者Mai, Haoxin; Lu, Teng; Li, Qian2; Liu, Zhifu3; Li, Yongxiang3; Kremer, Felipe4; Li, Li1; Withers, Ray L.; Wen, Haidan2; Liu, Yun
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2018
卷号10期号:15页码:12781
关键词above-band gap illumination ferroelectrics domain relaxation time PFM KPFM surface
ISSN号1944-8244
DOI10.1021/acsami.8b00254
英文摘要The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Thus, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.
学科主题Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000430642100070
出版者AMER CHEMICAL SOC
资助机构H.M., T.L., and Y.L. acknowledge the support from the Australian Research Council (ARC) in the form of Discovery Projects (DP160104780). The authors acknowledge the facilities and the scientific and technical assistance from the Australian Microscopy and Microanalysis Research Facility (AMMRF) at the Centre of Advanced Microscopy, the Australian National University. The use of Advanced Photon Source was supported by the U.S. DOE, Basic Energy Science under contract no. DE-AC02-06CH11357. Q.L. and H.W. were supported by the U.S. Department of Energy, Office of Science, Materials Science and Engineering Division. ; H.M., T.L., and Y.L. acknowledge the support from the Australian Research Council (ARC) in the form of Discovery Projects (DP160104780). The authors acknowledge the facilities and the scientific and technical assistance from the Australian Microscopy and Microanalysis Research Facility (AMMRF) at the Centre of Advanced Microscopy, the Australian National University. The use of Advanced Photon Source was supported by the U.S. DOE, Basic Energy Science under contract no. DE-AC02-06CH11357. Q.L. and H.W. were supported by the U.S. Department of Energy, Office of Science, Materials Science and Engineering Division.
源URL[http://ir.sic.ac.cn/handle/331005/24987]  
专题中国科学院上海硅酸盐研究所
作者单位1.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Res Sch Chem, Canberra, ACT 2601, Australia
2.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Australian Natl Fabricat Facil, Canberra, ACT 2601, Australia
3.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
4.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
5.Australian Natl Univ, Ctr Adv Microscopy, 131 Garran Rd, Canberra, ACT 2601, Australia
推荐引用方式
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Mai, Haoxin,Lu, Teng,Li, Qian,et al. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(15):12781, 12789.
APA Mai, Haoxin.,Lu, Teng.,Li, Qian.,Liu, Zhifu.,Li, Yongxiang.,...&Liu, Yun.(2018).Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains.ACS APPLIED MATERIALS & INTERFACES,10(15),12781.
MLA Mai, Haoxin,et al."Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains".ACS APPLIED MATERIALS & INTERFACES 10.15(2018):12781.

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来源:上海硅酸盐研究所

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