Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells
文献类型：期刊论文
| 作者 | Xiong, Shenghu; Yuan, Xiao; Tong, Hua; Yang, Yunxia; Liu, Cui; Ye, Xiaojun; Li, Yongsheng; Wang, Xianhao1; Luo, Lan2 |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2018 |
| 卷号 | 142页码:1 |
| ISSN号 | 0038-1101 |
| 关键词 | CTLM Specific contact resistance Contact formation Solar cell metallization |
| DOI | 10.1016/j.sse.2017.12.012 |
| 英文摘要 | Circular transmission line model (CTLM) measurements were applied to study the contact formation mechanism of the silver paste metallization on n-type emitter of crystalline silicon solar cells. The electrical performance parameters rho(c), R-sk, and L-t, which are related to the physical and chemical states of the multiphase materials at the interface, were extracted from the CTLM measurements, and were found to be sensitive to sintering temperature. As the temperature increased from 585 degrees C to 780 degrees C, initially the rho(c) value decreased rapidly, then flattened out and increased slightly. The order of resistivity magnitude was restricted by the SiNx passivation layer in the early sintering stages, and relied on the carrier tunneling probability affected by the precipitated silver crystallites or colloids, emitter doping concentration and molten glass layer. Based on the calculations that the sheet resistance underneath the electrode was reduced form 110 Omega/square to 0.186 Omega/square, it could be inferred that there was formation of a highly conductive layer of silver crystallites and colloids contained glass on the emitter. The transfer length L-t exhibited a U-shaped variation along with the temperature, reflecting the variation of the interfacial electrical properties. Overall, this article shows that the CTLM method can become a new powerful tool for researchers to meet the challenges of silver paste metallization innovation for manufacturing high-efficiency silicon solar cells. |
| 学科主题 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000427564400001 |
| 资助机构 | This study was supported by the Shanghai Science and Technology Committee Scientific Projects [Number 15dz1200902] and [Number 17dz1201102]. We also thank Hareon Solar Technology Co. Ltd. for providing cell samples and SEM testing. ; This study was supported by the Shanghai Science and Technology Committee Scientific Projects [Number 15dz1200902] and [Number 17dz1201102]. We also thank Hareon Solar Technology Co. Ltd. for providing cell samples and SEM testing. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25050]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China 2.Carle Zeiss Shanghai Co Ltd, Shanghai 200131, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200131, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiong, Shenghu,Yuan, Xiao,Tong, Hua,et al. Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells[J]. SOLID-STATE ELECTRONICS,2018,142:1, 7. |
| APA | Xiong, Shenghu.,Yuan, Xiao.,Tong, Hua.,Yang, Yunxia.,Liu, Cui.,...&Luo, Lan.(2018).Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells.SOLID-STATE ELECTRONICS,142,1. |
| MLA | Xiong, Shenghu,et al."Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells".SOLID-STATE ELECTRONICS 142(2018):1. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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