Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film by pulsed laser deposition
文献类型：期刊论文
| 作者 | Jiao, Shan; Tang, Yanxue; Zhao, Xiangyong; Wang, Tao; Duan, Zhihua; Wang, Feifei; Sun, Dazhi1; Luo, Haosu2; Shi, Wangzhou |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2018 |
| 卷号 | 29期号:8页码:6779 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-018-8664-5 |
| 英文摘要 | (100)-oriented epitaxial relaxor ferroelectric 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-0.3PT) thin film was prepared on SrRuO3-buffered SrTiO3 single-crystal substrate by pulsed laser deposition. The phase and domain structure, ferroelectric and piezoelectric properties, and leakage current behavior were studied. Results indicated well saturated polarization-versus-electric field hysteresis loops with large remnant polarization of 30 A mu C/cm(2) and coercive field of 11 kV/mm was obtained. The analysis on the leakage current behavior proposed that linear ohmic conduction and Fowler-Nordheim tunneling were the dominant mechanism for the electric field amplitude below and above 15 kV/mm, respectively. Furthermore, the epitaxial PMN-0.3PT thin film exhibited excellent local piezoelectric response and in situ electric-field-induced domain switching behavior. These results suggest the potential applications of the present epitaxial PMN-0.3PT film in integrated ferroelectric devices. |
| 学科主题 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 出版者 | SPRINGER |
| WOS记录号 | WOS:000427715600074 |
| 资助机构 | This work was financially supported by Natural Science Foundation of China (Grant Nos. 61404085, 11574214, 51772192, and 11604211), the Opening Project of Key Laboratory of Transparent Opto-functional Inorganic Materials, Chinese Academy of Sciences (No. KLTOIM201602), the Science and Technology Commission of Shanghai Municipality (No. 17070502700), and Shanghai Normal University Program (Grant No. SK201601). ; This work was financially supported by Natural Science Foundation of China (Grant Nos. 61404085, 11574214, 51772192, and 11604211), the Opening Project of Key Laboratory of Transparent Opto-functional Inorganic Materials, Chinese Academy of Sciences (No. KLTOIM201602), the Science and Technology Commission of Shanghai Municipality (No. 17070502700), and Shanghai Normal University Program (Grant No. SK201601). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25051]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, 100 Guilin Rd, Shanghai 200234, Peoples R China 2.Shanghai Normal Univ, Dept Chem, Key Lab Resource Chem, Educ Minist,Dept Chem, 100 Guilin Rd, Shanghai 200234, Peoples R China 3.Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, 215 Chengbei Rd, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiao, Shan,Tang, Yanxue,Zhao, Xiangyong,et al. Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film by pulsed laser deposition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(8):6779, 6784. |
| APA | Jiao, Shan.,Tang, Yanxue.,Zhao, Xiangyong.,Wang, Tao.,Duan, Zhihua.,...&Shi, Wangzhou.(2018).Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film by pulsed laser deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(8),6779. |
| MLA | Jiao, Shan,et al."Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film by pulsed laser deposition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.8(2018):6779. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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