Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers
文献类型：期刊论文
| 作者 | Li, Guanjie1; Li, Xiaomin; Bi, Zhijie1; Chen, Yongbo1; Xu, Xiaoke2 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 216页码:224 |
| 关键词 | Ferroelectrics Thin films Epitaxial growth PMN-PT GaN Physical vapour deposition |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2018.01.086 |
| 英文摘要 | 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) ferroelectric thin films were epitaxially integrated on GaN (0002) substrates by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO)/TiO2 buffer layers are designed to decrease the lattice mismatch between PMN-PT and GaN, which promotes the epitaxial growth of pure perovskite PMN-PT (111) thin films. Meanwhile, LSCO/TiO2 heterostructures could be served as the bottom electrodes for integrated ferroelectric devices. Epitaxial relationship of the multilayer is determined to be (111) [1 (1) over bar0] PMN-PT//(111) [1 (1) over bar0]LSCO//(100)[001] TiO2//(0002) [11 (2) over bar0] GaN. The integrated PMN-PT (111) films exhibit good ferroelectric and dielectric properties with remanent polarization of 11.3 mu C/cm(2), coercive field of 34.1 kV/cm at 100 Hz, dielectric constant of 2035 and dielectric tunability of 68.1% at 1 kHz, which make it a potential candidate for the applications in GaN-based integrated ferroelectric devices. (C) 2018 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science, Multidisciplinary ; Physics, Applied |
| WOS记录号 | WOS:000424713000060 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | This work was supported by the National Key R&D Program of China (No. 2016YFA0201103), the National Natural Science Foundation of China (No. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (No. 15JC1403600). ; This work was supported by the National Key R&D Program of China (No. 2016YFA0201103), the National Natural Science Foundation of China (No. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (No. 15JC1403600). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25073]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Guanjie,Li, Xiaomin,Bi, Zhijie,et al. Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers[J]. MATERIALS LETTERS,2018,216:224, 227. |
| APA | Li, Guanjie,Li, Xiaomin,Bi, Zhijie,Chen, Yongbo,&Xu, Xiaoke.(2018).Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers.MATERIALS LETTERS,216,224. |
| MLA | Li, Guanjie,et al."Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers".MATERIALS LETTERS 216(2018):224. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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