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Enhancing the Photovoltage of Ni/n-Si Photoanode for Water Oxidation through a Rapid Thermal Process

文献类型：期刊论文

作者Li, Shengyang1; She, Guangwei; Chen, Cheng1,2; Zhang, Shaoyang1; Mu, Lixuan; Guo, Xiangxin2; Shi, Wensheng1
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2018
卷号10期号:10页码:8594
ISSN号1944-8244
关键词Ni/n-Si photoanode water oxidation interface states Schottky barrier height photovoltage
DOI10.1021/acsami.7b16986
英文摘要The Ni in the Ni/n-Si photoanode can not only protect Si from corrosion, but also catalyze the water oxidation reaction. However, the high density of interface states at the Ni/n-Si interface could pin the Fermi level of silicon, which will lower the Schottky barrier height of the Ni/n-Si. As a result, a low photovoltage and consequent high onset potential of Ni/n-Si photoanode for water oxidation were generated. In this study, the interfacial states of the Ni/n-Si photoanodes were efficiently diminished through a rapid thermal process (RTP). Calculated from the Mott-Schottky plots, the Schottky barrier height of Ni/n-Si was increased from 0.58 to 0.78 eV after RTP. Under the illumination of 100 mW cm(-2) of the Xe lamp, the onset potential of the Ni/n-Si photoanode for water oxidation was negatively shifted for 150 mV after RTP. Besides, the RTP-treated Ni/n-Si photoanode exhibited a high stability during the PEC water oxidation of 8 h in 1 M KOH solution.
学科主题Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
出版者AMER CHEMICAL SOC
WOS记录号WOS:000427910800023
资助机构This work was supported by National Basic Research Program of China (Grant 2016YFA0200801), NSFC (Grant 51672284), Chinese Academy of Sciences (Grants QYZDJ-SSW-JSC032 and XDB17000000), and the Youth Innovation Promotion Association CAS (Grant 2014022). ; This work was supported by National Basic Research Program of China (Grant 2016YFA0200801), NSFC (Grant 51672284), Chinese Academy of Sciences (Grants QYZDJ-SSW-JSC032 and XDB17000000), and the Youth Innovation Promotion Association CAS (Grant 2014022).
源URL[http://ir.sic.ac.cn/handle/331005/25097]  
专题中国科学院上海硅酸盐研究所
作者单位1.Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Chinese Acad Sci, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
推荐引用方式
GB/T 7714		 Li, Shengyang,She, Guangwei,Chen, Cheng,et al. Enhancing the Photovoltage of Ni/n-Si Photoanode for Water Oxidation through a Rapid Thermal Process[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(10):8594, 8598.
APA Li, Shengyang.,She, Guangwei.,Chen, Cheng.,Zhang, Shaoyang.,Mu, Lixuan.,...&Shi, Wensheng.(2018).Enhancing the Photovoltage of Ni/n-Si Photoanode for Water Oxidation through a Rapid Thermal Process.ACS APPLIED MATERIALS & INTERFACES,10(10),8594.
MLA Li, Shengyang,et al."Enhancing the Photovoltage of Ni/n-Si Photoanode for Water Oxidation through a Rapid Thermal Process".ACS APPLIED MATERIALS & INTERFACES 10.10(2018):8594.

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来源：上海硅酸盐研究所

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