中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

文献类型:期刊论文

作者Wang, Hui1; Li, Qin1; Wang, Chaoyue1; He, Huan1; Yu, Jianding1; Xu, Jiayue
刊名CRYSTALS
出版日期2018
卷号8期号:3
关键词Ta-LTO single crystal floating zone method dielectric properties oxygen vacancy
ISSN号2073-4352
DOI10.3390/cryst8030113
英文摘要High-quality Ta-doped La2Ti2O7 (Ta-LTO) single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P2(1) space group. The dielectric properties were investigated as functions of temperature (0 similar to 300 degrees C) and frequency (10(2) Hz similar to 10(5) Hz). Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.
学科主题Crystallography ; Materials Science, Multidisciplinary
WOS记录号WOS:000427705100006
出版者MDPI
资助机构The work is supported by the Nature Science Foundation of China (51572175) and the International Cooperation Program of Chinese Academy of Sciences (Y35YQ1110G). ; The work is supported by the Nature Science Foundation of China (51572175) and the International Cooperation Program of Chinese Academy of Sciences (Y35YQ1110G).
源URL[http://ir.sic.ac.cn/handle/331005/25118]  
专题中国科学院上海硅酸盐研究所
作者单位1.Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
推荐引用方式
GB/T 7714
Wang, Hui,Li, Qin,Wang, Chaoyue,et al. Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals[J]. CRYSTALS,2018,8(3).
APA Wang, Hui,Li, Qin,Wang, Chaoyue,He, Huan,Yu, Jianding,&Xu, Jiayue.(2018).Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals.CRYSTALS,8(3).
MLA Wang, Hui,et al."Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals".CRYSTALS 8.3(2018).

入库方式: OAI收割

来源:上海硅酸盐研究所

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