Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer
文献类型：期刊论文
| 作者 | Chen, Shanshan1; Yang, Songwang2; Sun, Hong1; Zhang, Lu1; Peng, Jiajun3; Liang, Ziqi3; Wang, Zhong-Sheng1 |
| 刊名 | Journal of Power Sources
 |
| 出版日期 | 2017 |
| 卷号 | 353页码:123-130 |
| ISSN号 | 03787753 |
| DOI | 10.1016/j.jpowsour.2017.03.144 |
| 英文摘要 | To improve the electron transfer at the interface between the perovskite film and the electron-transporting-material (ETM) layer, CoSe doped [6,6]-phenyl C61-butyric acid methyl ester (PCBM) is employed as the ETM layer for the inverted planar perovskite solar cell with NiO as the hole-transporting-material layer. Introduction of CoSe (5.8 wt%) into the PCBM layer improves the conductivity of the ETM layer and decreases the photoluminescence intensity, thus enhancing the interfacial electron extraction and reducing the electron transfer resistance at the perovskite/ETM interface. As a consequence, the power conversion efficiency is enhanced from 11.43% to 14.91% by 30% due to the noted increases in short-circuit current density from 17.95 mA cm−2to 19.85 mA cm−2and fill factor from 0.60 to 0.70. This work provides a new strategy to improve the performance of inverted perovskite solar cells. © 2017 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25411]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Lab of Advanced Materials, Collaborative Innovation Center of Chemistry for Energy Materials (2011-iChEM), Fudan University, 2205 Songhu Road, Shanghai; 200438, China; 2.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Shanghai; 201899, China; 3.Department of Materials Science, Fudan University, 220 Handan Road, Shanghai; 20433, China |
| 推荐引用方式 GB/T 7714 | Chen, Shanshan,Yang, Songwang,Sun, Hong,et al. Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer[J]. Journal of Power Sources,2017,353:123-130. |
| APA | Chen, Shanshan.,Yang, Songwang.,Sun, Hong.,Zhang, Lu.,Peng, Jiajun.,...&Wang, Zhong-Sheng.(2017).Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer.Journal of Power Sources,353,123-130. |
| MLA | Chen, Shanshan,et al."Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer".Journal of Power Sources 353(2017):123-130. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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