GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics
文献类型:期刊论文
作者 | Wang, Ying1,2; Zhou, Xinyuan2; Yang, Zaixing3,4; Wang, Fengyun5,6; Han, Ning1,2; Chen, Yunfa1,2; Ho, Johnny C.7 |
刊名 | CRYSTALS |
出版日期 | 2018-09-01 |
卷号 | 8期号:9页码:21 |
ISSN号 | 2073-4352 |
关键词 | Gaas Nanowires Catalyst Epitaxy Photovoltaics Optical Absorption Schottky Barrier |
DOI | 10.3390/cryst8090347 |
英文摘要 | Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices. |
WOS关键词 | Iii-v Nanowire ; Shockley-queisser Limit ; Tandem Solar-cells ; Detailed Balance Limit ; Molecular-beam Epitaxy ; High-efficiency ; Crystal Phase ; Inas Nanowires ; Low-cost ; 3rd-generation Photovoltaics |
资助项目 | National Natural Science Foundation of China[61504151] ; National Natural Science Foundation of China[51602314] ; National Key R&D Program of China[2016YFC0207100] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064] ; State Key Laboratory of Multiphase Complex Systems[MPCS-2014-C-01] |
WOS研究方向 | Crystallography ; Materials Science |
语种 | 英语 |
出版者 | MDPI |
WOS记录号 | WOS:000447917200016 |
资助机构 | National Natural Science Foundation of China ; National Key R&D Program of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences ; State Key Laboratory of Multiphase Complex Systems |
源URL | [http://ir.ipe.ac.cn/handle/122111/26415] |
专题 | 中国科学院过程工程研究所 |
通讯作者 | Han, Ning; Chen, Yunfa; Ho, Johnny C. |
作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Reg Atmospher Environm, Xiamen 361021, Peoples R China 3.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China 4.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China 5.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China 6.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China 7.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Ying,Zhou, Xinyuan,Yang, Zaixing,et al. GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics[J]. CRYSTALS,2018,8(9):21. |
APA | Wang, Ying.,Zhou, Xinyuan.,Yang, Zaixing.,Wang, Fengyun.,Han, Ning.,...&Ho, Johnny C..(2018).GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics.CRYSTALS,8(9),21. |
MLA | Wang, Ying,et al."GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics".CRYSTALS 8.9(2018):21. |
入库方式: OAI收割
来源:过程工程研究所
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