Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit
文献类型:期刊论文
作者 | Sun, Jiamin1,2,3; Yin, Yanxue1,2; Han, Mingming1,2; Yang, Zai-xing1,2,3; Lan, Changyong4; Liu, Lizhe6; Wang, Ying7; Han, Ning7; Shen, Lifan4; Wu, Xinglong6 |
刊名 | ACS NANO |
出版日期 | 2018-10-01 |
卷号 | 12期号:10页码:10410-10418 |
ISSN号 | 1936-0851 |
关键词 | Inp Nanowire Nonpolar Electron Mobility Vapor-solid-solid In-plane Lattice Mismatch |
DOI | 10.1021/acsnano.8b05947 |
英文摘要 | As an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical vapor-liquid-solid mechanism are still restricted from their low electron mobility for practical applications. Here, wnonpolaroriented defect-free wurtzite InP NWs with electron mobility of as high as 2000 cm(2) V-1 s(-1) can be successfully synthesized via Pd-catalyzed vapor-solid-solid growth. Specifically, PdIn catalyst particles are involved and found to expose their PdIn{210} planes at the InP nucleation frontier due to their minimal lattice mismatch with nonpolar InP{(2) over bar 110} and {(1) over bar 100} planes. This appropriate lattice registration would then minimize the overall free energy and enable the highly crystalline InP NW growth epitaxially along the nonpolar directions. Because of the minimized crystal defects, the record-high electron mobility of InP NVVs (i.e., 2000 cm(-2) V-1 s(-1) at an electron concentration of 10(17) cm(-3)) results, being close to the theoretical limit of their bulk counterparts. Furthermore, once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec(-1) at room temperature. In addition, these NWs exhibit a high photoresponsivity of 10(4) A W-1 with fast rise and decay times of 0.89 and 0.82 s, respectively, in photodetection. All these results evidently demonstrate the promise of nonpolar-oriented InP NWs for next-generation electronics and optoelectronics. |
WOS关键词 | Indium-phosphide Nanowires ; Photoconductive Terahertz Detectors ; Chemical-vapor-deposition ; Augmented-wave Method ; Iii-v Nanowires ; Inas Nanowires ; Silicon Nanowires ; Single Nanowire ; Gasb Nanowires ; Transport-properties |
资助项目 | National Key R&D Program of China[2017YFA0305500] ; Shandong Provincial Natural Science Foundation, China[ZR2017MF037] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170307093131123] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818095520778] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000448751800079 |
资助机构 | National Key R&D Program of China ; Shandong Provincial Natural Science Foundation, China ; Science Technology and Innovation Committee of Shenzhen Municipality |
源URL | [http://ir.ipe.ac.cn/handle/122111/26463] |
专题 | 中国科学院过程工程研究所 |
通讯作者 | Yang, Zai-xing; Han, Ning; Ho, Johnny C. |
作者单位 | 1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China 2.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China 3.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 4.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China 5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 6.Nanjing Univ, Key Lab Modern Acoust, MOE,Natl Lab Solid State Microstruct, Inst Acoust,Collaborat Innovat Ctr Adv Microstruc, Nanjing 210093, Jiangsu, Peoples R China 7.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Sun, Jiamin,Yin, Yanxue,Han, Mingming,et al. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit[J]. ACS NANO,2018,12(10):10410-10418. |
APA | Sun, Jiamin.,Yin, Yanxue.,Han, Mingming.,Yang, Zai-xing.,Lan, Changyong.,...&Ho, Johnny C..(2018).Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit.ACS NANO,12(10),10410-10418. |
MLA | Sun, Jiamin,et al."Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit".ACS NANO 12.10(2018):10410-10418. |
入库方式: OAI收割
来源:过程工程研究所
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