Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films
文献类型：期刊论文
| 作者 | Guo, Xin1,2,3; Ge, Jun1,2,3; Ponchel, Freddy2; Rémiens, Denis2; Chen, Ying1; Dong, Xianlin1; Wang, Genshui1 |
| 刊名 | Thin Solid Films
 |
| 出版日期 | 2017 |
| 卷号 | 632页码:93-96 |
| ISSN号 | 00406090 |
| DOI | 10.1016/j.tsf.2017.04.045 |
| 英文摘要 | 22 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26090]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai; 200050, China; 2.Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–DOAE, UMR CNRS 8520, Université´ de Valenciennes et du Hainaut Cambrésis, Cedex 9, Valenciennes; 59313, France; 3.University of Chinese Academy of Sciences, 19 A Yuquan Rd., Shijingshan District, Beijing; 100049, China |
| 推荐引用方式 GB/T 7714 | Guo, Xin,Ge, Jun,Ponchel, Freddy,et al. Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films[J]. Thin Solid Films,2017,632:93-96. |
| APA | Guo, Xin.,Ge, Jun.,Ponchel, Freddy.,Rémiens, Denis.,Chen, Ying.,...&Wang, Genshui.(2017).Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films.Thin Solid Films,632,93-96. |
| MLA | Guo, Xin,et al."Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3thin films".Thin Solid Films 632(2017):93-96. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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