Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3crystals
文献类型：期刊论文
| 作者 | Ye, Le1,2; Li, Huanying2; Wang, Chao2; Shi, Jian2; Chen, Xiaofeng2; Wang, Zhongqing3; Huang, Yuefeng3; Xu, Jiayue1; Ren, Guohao2 |
| 刊名 | Optical Materials
 |
| 出版日期 | 2017 |
| 卷号 | 64页码:121-125 |
| ISSN号 | 09253467 |
| DOI | 10.1016/j.optmat.2016.11.048 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26041]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai; 200235, China; 2.Shanghai Institute of Ceramic, Chinese Academy of Science, Shanghai; 200050, China; 3.Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai; 201800, China |
| 推荐引用方式 GB/T 7714 | Ye, Le,Li, Huanying,Wang, Chao,et al. Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3crystals[J]. Optical Materials,2017,64:121-125. |
| APA | Ye, Le.,Li, Huanying.,Wang, Chao.,Shi, Jian.,Chen, Xiaofeng.,...&Ren, Guohao.(2017).Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3crystals.Optical Materials,64,121-125. |
| MLA | Ye, Le,et al."Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3crystals".Optical Materials 64(2017):121-125. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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