APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation
文献类型：期刊论文
| 作者 | Fu, Chao-Li1,2; Yang, Yong1; Ma, Yun-Feng1; Wei, Yu-Quan1; Jiao, Zheng2; Huang, Zheng-Ren1 |
| 刊名 | Wuji Cailiao Xuebao/Journal of Inorganic Materials
 |
| 出版日期 | 2017 |
| 卷号 | 32期号:1页码:69-74 |
| ISSN号 | 1000324X |
| DOI | 10.15541/jim20160170 |
| 英文摘要 | The anti laser HfO2films were deposited by reactive plasma ion assisted electron beam evaporation in low O2-pressure with different Advanced Plasma Source (APS) bias voltages. Properties of HfO2film sincluding chemical composition, refractive index and residual stress were investigated. Microstructure of HfO2films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Laser induced damage threshold (LIDT) and damage mechanisms of HfO2films were finally evaluated and discussed. Properties of HfO2films display sensitive to APS bias voltage. As the APS bias voltage decreases, the O/Hf ratio in the film increases, accompanied by decreasing refractive index and residual stress. The damage morphology of HfO2films appears in the form of agglomerations of craters with a few hundreds of nanometers, left by evaporation of grains ascribed to strong absorption and accumulation of laser energy at grain-boundaries. HfO2films with higher LIDT can be grown under lower bias voltage which benefits the achievement of uniform microstructure and the crystallization orientation from (111) plane to (002) plane with low grain boundary energy and lattice defects. © 2017, Science Press. All right reserved. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25947]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Structural Ceramic Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 201800, China; 2.College of Environmental Chemistry and Engineering, Shanghai University, Shanghai; 200444, China |
| 推荐引用方式 GB/T 7714 | Fu, Chao-Li,Yang, Yong,Ma, Yun-Feng,et al. APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation[J]. Wuji Cailiao Xuebao/Journal of Inorganic Materials,2017,32(1):69-74. |
| APA | Fu, Chao-Li,Yang, Yong,Ma, Yun-Feng,Wei, Yu-Quan,Jiao, Zheng,&Huang, Zheng-Ren.(2017).APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation.Wuji Cailiao Xuebao/Journal of Inorganic Materials,32(1),69-74. |
| MLA | Fu, Chao-Li,et al."APS bias voltage on properties of HfO2laser films deposited by reactive plasma ion assisted electron evaporation".Wuji Cailiao Xuebao/Journal of Inorganic Materials 32.1(2017):69-74. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。