Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band
文献类型：期刊论文
| 作者 | Luo, Heng1,2; Tan, Yongqiang1; Li, Yang2,3; Xiao, Peng2; Deng, Lianwen2; Zeng, Sifan1; Zhang, Guojun4,5; Zhang, Haibin1; Zhou, Xiaosong1; Peng, Shuming1 |
| 刊名 | Journal of the European Ceramic Society
 |
| 出版日期 | 2017 |
| 卷号 | 37期号:5页码:1961-1968 |
| ISSN号 | 09552219 |
| DOI | 10.1016/j.jeurceramsoc.2016.12.028 |
| 英文摘要 | The high-temperature dielectric behavior of multilayer Cf/Si3N4composites fabricated by gelcasting and pressuureless sintering was intensively investigated at temperatures coverage up to 800 °C in X-band (8.2–12.4 GHz). Experimental results have shown the permittivity of Si3N4matrix exhibits excellent thermo-stability with temperature coefficient lower than 10−3 °C−1. Besides, both the real and imaginary parts of permittivity of multilayer Cf/Si3N4composites exhibit positive temperature coefficient characteristic which attributed to the enhancement of space charge polarization. Furthermore, temperature-dependent permittivity of Cf/Si3N4composites is demonstrated to be well distributed on circular arcs with centers actually keep around the real (Ε') axis in Cole-Cole plane. Finally, the relaxation time for multilayer Cf/Si3N4composites gradually increases from 216.1 ps to 250.2 ps when heated from room temperature to 800 °C, and is almost twice as much as a single cycle for electromagnetic wave in X-band which leads to continuous decrease in permittivity with frequency. © 2016 Elsevier Ltd |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25810]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang; 621900, China; 2.State Key Laboratory for Powder Metallurgy, Central South University, Changsha; 410083, China; 3.Ceramic Materials Engineering, University of Bayreuth, Bayreuth; 95447, Germany; 4.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai; 201620, China; 5.Research Institute of Functional Materials, Donghua University, Shanghai; 201620, China |
| 推荐引用方式 GB/T 7714 | Luo, Heng,Tan, Yongqiang,Li, Yang,et al. Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band[J]. Journal of the European Ceramic Society,2017,37(5):1961-1968. |
| APA | Luo, Heng.,Tan, Yongqiang.,Li, Yang.,Xiao, Peng.,Deng, Lianwen.,...&Peng, Shuming.(2017).Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band.Journal of the European Ceramic Society,37(5),1961-1968. |
| MLA | Luo, Heng,et al."Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band".Journal of the European Ceramic Society 37.5(2017):1961-1968. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。