Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
文献类型：期刊论文
| 作者 | Ali, Faizan1; Liu, Xiaohua1; Zhou, Dayu1; Yang, Xirui1; Xu, Jin2; Schenk, Tony3; Müller, Johannes4; Schroeder, Uwe3; Cao, Fei5; Dong, Xianlin5 |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2017 |
| 卷号 | 122期号:14 |
| ISSN号 | 00218979 |
| DOI | 10.1063/1.4989908 |
| 英文摘要 | Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3is achieved at 4.5 MV/cm with a high efficiency of ∼65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3in fabrication of nano-structural supercapacitors. © 2017 Author(s). |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25787]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Key Laboratory of Materials Modification by Laser Ion, and Electron Beams, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian; 116024, China; 2.Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian; 116023, China; 3.NaMLab GGmbH/TU Dresden, Noethnitzer Str. 64, Dresden; D-01187, Germany; 4.Fraunhofer IPMS, Koenigsbruecker Str. 178, Dresden; 01099, Germany; 5.Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China |
| 推荐引用方式 GB/T 7714 | Ali, Faizan,Liu, Xiaohua,Zhou, Dayu,et al. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage[J]. Journal of Applied Physics,2017,122(14). |
| APA | Ali, Faizan.,Liu, Xiaohua.,Zhou, Dayu.,Yang, Xirui.,Xu, Jin.,...&Dong, Xianlin.(2017).Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage.Journal of Applied Physics,122(14). |
| MLA | Ali, Faizan,et al."Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage".Journal of Applied Physics 122.14(2017). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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